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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9018W TRANSISTOR (NPN)
FEATURES
Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=12V, IE=0 50 nA Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current IEBO VEB=3V, IC=0 100 nA DC current gain hFE VCE=5V, IC=1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.4 V Transition frequency fT VCE=5V,IC=5mA , f=400MHz 600 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 2 pF CLASSIFICATION OF hFE RANK L H RANGE 70–105 105–190 MARKING J8 SOT–323 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com B,Sep,2014 JC(T
A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 2 A,Jun,2014www.cj-elec.com B,Sep,2014
www.cj-elec.com 3 A,Jun,2014www.cj-elec.com B,Sep,2014