S9016LT1 JIANGSU | Alldatasheet
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Technical content
- 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN)
FEATURES
PCM: 200 mW (Tamb=25℃) Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain HFE(1) VCE=5V, IC= 1mA 200 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.3 V Transition frequency fT VCE=5V, IC= 1mA f=100MHz 300 MHz DEVICE MARKING S9016LT1= Y6 Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR