UMG3N JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMG3N

FEATURES

z Two DTC143T chips in a package z Mounting possible with SOT-35 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: G3 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 100 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 5 V Collector cut-off current I CBO V CB =50V,I E =0 0.5 μA Emitter cut-off current I EBO V EB =4V,I C =0 0.5 μA DC current gain h FE V CE =5V,I C =1mA 100 600 Collector-emitter saturation voltage V CE(sat) I C =5mA,I B =0.25mA 0.3 V Transition frequency f T V CE =10V,I E =-5mA, f=100MHz 250 MHz Input resistor R 3.29 4.7 6.11 KΩ JC(T SOT-353 Dual Digital Transistors (NPN+NPN) www.cj-elec.com 1www.cj-elec.com D,Mar,2016 Digital Transistors (Built-in Resistors)

0.1 1 10 0.1 100 0.1 1 10 0.1 100 0.1 1 10 100 100 1000 0123456 11 0 1 0 0 0.1 100 1 10 100 0.01 0.1 0 25 50 75 100 125 150 100 150 200 V CE =5V T a =100 T a =25 COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C I C C ob C ib V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 o C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =100 o C T a =25 o C V BE h FE V CE =5V COMMON EMITTER T a =25 50uA 45uA 40uA 35uA 30uA 25uA 20uA 15uA 10uA I B =5uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic T a =25 T a =100 β=20 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) I C V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) T a =100 T a =25 β=20 I C V CEsat POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) P D —— T a Typical Characteristics www.cj-elec.com 2www.cj-elec.com D,Mar,2016

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-353 Suggested Pad Layout www.cj-elec.com D,Mar,2016

www.cj-elec.com D,Mar,2016