UMF21N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMF21N

DESCRIPTION

Silicon epitaxial planar transistor

FEATURES

z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:F21 TR1 MAXIMUM RATINGS T a =25℃ unless otherwise noted Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -10~ 40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 Storage temperature Tstg -55~150 Symbol Parameter Value Units V CBO Collector- Base Voltage -15 V V CEO Collector-Emitter Voltage -12 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -0.5 A P C Collector Dissipation 0.15 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ JC(T SOT-363 Plastic-Encapsulate Transistors DU A L D I G I T A L T R A N S I S T O R ( N P N + P N P ) SOT-363 z z www.cj-elec.com 1www.cj-elec.com E,Mar,2016

TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10 μ A, I E =0 -15 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -12 V Emitter-base breakdown voltage V (BR)EBO I E =-10 μ A, I C =0 -6 V Collector cut-off current I CBO V CB = -15 V, I E =0 -0.1 μ A Emitter cut-off current I EBO V EB =- 6V, I C =0 -0.1 μ A DC current gain h FE V CE =-2V, I C =-10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =-200mA,I B =-10mA -0.25 V Transition frequency f T V CE =-2V,I C =-10mA, f= 100 MHz

260 MHz

Collector output capacitance C ob V CB V,I E =0,f= MHz 6.5 pF Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V ,I O =100μA Input voltage V I(on) V V O =0.3V ,I O =10 mA Output voltage V O(on)

0.3 V I

O I =10mA/0.5mA Input current I I 0.88 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 30 V O =5V ,I O =5mA Input resistance R 7 10 13 K Ω Resistance ratio R 0.8 1 1.2 Transition frequency f T

250 MHz V

=10V ,I E =-5mA,f=100MHz www.cj-elec.com 2www.cj-elec.com E,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com E,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4www.cj-elec.com E,Mar,2016