UMC3N JIANGSU | Alldatasheet

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ANG ELECTRONICS TECHNOLOGY CO., LTD UMC3N FEA TURES z DT A114E and DTC114E transistors are built-in a package z Ideal for power switch circuits z Mount ing cost and area can be cut in half MARKING: NPN DTC114E A bsolute maximum ratings (Ta=25℃) Electrical ch aracteristics (Ta=25℃) Parameter Symbol Min Typ Max Unit Conditions VI( off) 0.5 VCC=5 V ,IO= 100μA Inpu t voltage VI( on) 3 V VO=0.3V ,IO= 10mA Outp ut voltage VO( on)

0.3 V I O/II=

10mA/0.5mA Inpu t current II 0.88 mA V I=5 V Outp ut current IO( off) 0.5 μA V CC= 50V, VI=0 DC cu rrent gain GI 30 V O=5 V,IO=5 mA In put resistance R1 7 10 13 k Ω Resist ance ratio R2/R1 0.8 1 1.2 T ransition frequency fT

250 MHz V CE=

10V ,IE= -5mA,f=100MHz PNP DTA114E A bsolute maximum ratings (Ta=25℃) Electrical ch aracteristics (Ta=25℃) Parameter Symbol Min Typ Max Unit Conditions VI( off) -0.5 VCC=-5V ,IO=-1 00μA Inpu t voltage VI( on) -3 V VO= -0.3V ,IO= -10mA Outp ut voltage VO( on) -0.3 V I O/II=-10mA/-0.5mA Inpu t current II -0.88 mA V I=-5 V Outp ut current IO( off) -0.5 μA V CC= -50V, VI=0 DC cu rrent gain GI 30 V O=-5 V,IO=-5 mA In put resistance R1 7 10 13 kΩ Resist ance ratio R2/R1 0.8 1 1.2 T ransition frequency fT -10V ,IE= 5mA,f=100MHz Para meter Symbol Limit s Unit Supply voltage VCC 50 V Inpu t voltage VIN -10~+ 40 V IO 50 Outp ut current ICM 100 mA Po wer dissipation PD 150 mW J unction temperature Tj 150 ℃ S torage temperature Tstg -55~150 ℃ Para meter Symbol Limit s Unit Supply voltage VCC -50 V Inpu t voltage VIN -40~+ 10 V IO -50 Outp ut current ICM -100 mA Po wer dissipation PD 150 mW J unction temperature Tj 150 ℃ S torage temperature Tstg -55~150 ℃ JC(T SOT-353 Dual Digital Transistors (NPN+PNP) www.cj-elec.com 1www.cj-elec.com E,Mar,2016 Digit al Transistors (Built-in Resistors)

0.1 1 10 0.1 100 100 1000 0.1 1 10 100 100 1000 5 10 15 20 25 50 75 100 125 150 100 150 200 0.0 1E-3 0.01 0.1 O FF Characteristics 0.3 O N Characteristics Ta=25℃ Ta=100℃ VO=0.3V 30.3 30 OUTPUT CURRENT IO (m INPUT VOLTAGE VI( ON) (V) IOIO 300 30.5 VO( ON) — Ta=25℃ Ta=100℃ IO/II=20 O UTPUT VOLTAGE VO(ON ) (mV) OUTPUT CURRENT IO (m Ta=25℃ Ta=100℃ VO=5V 300 30.3 30 GI — OUTPUT CURRENT IO (m DC CURRENT GAIN GI VR f=1M Hz Ta=25℃ CO — CAPACIT ANCE CO (pF) REVERSE BIAS VO LTAGE VR (V) TaPD — PO WER DISSIPATION PD (mW) AM BIENT TEMPERATURE Ta ( Ta=100℃ Ta=25℃ 0.3 0.03 3E- VCC=5V OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI (OFF) (V) DTC114ET ypical Characteristics www.cj-elec.com 2www.cj-elec.com E,Mar,2016

.1 -1 -10 -100 -0.1 -10 -100 -0.0 -0.01 -0.1 -10 .1 -1 -10 -100 100 1000 25 50 75 100 125 150 100 150 200 8 1 2 1 6 2 0 -10 -100 -10 -100 -1000 O N Characteristics Ta=25℃ Ta=100℃ VO=- 0.3V -3-0 .3 -30 OUTPUT CURRENT IO (m INPUT VOLTAGE VI( ON) (V) O FF Characteristics Ta=100℃ Ta=25℃ -0.03 VCC=-5V OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI (OFF) (V) -30 Ta=25℃ Ta=100℃ VO=-5V 300 -3-0 .3 -30 GI — — I O OUTPUT CURRENT IO (m DC CURRENT GAIN GI PD — — T a PO WER DISSIPATION PD (mW) AM BIENT TEMPERATURE Ta ( f=1M Hz Ta=25℃ CO — — V R O UTPUT CAPACITANCE CO (pF) REVERSE BIAS VO LTAGE VR (V) 300 -30 -30-3 VO( ON) — — I O Ta=25℃ Ta=100℃ IO/II=20 O UTPUT VOLTAGE VO(ON ) (mV) OUTPUT CURRENT IO (m DTA 114ET ypical Characteristics www.cj-elec.com 3www.cj-elec.com E,Mar,2016

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-353 Suggested Pad Layout www.cj-elec.com

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