UM6014

UM6014 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =4A --- 33 40 mΩ V GS =4.5V , I D =3A --- 40 50 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -4.8 --- mV/℃ I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =4A --- 28.3 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 2.5 5 Ω Q g Total Gate Charge (10V) V DS =48V , V GS =10V , I D =4A --- 19 26.6 nC Q gs Gate-Source Charge --- 2.6 3.6 Q gd Gate-Drain Charge --- 4.1 5.7 T d(on) Turn-On Delay Time V DD =30V , V GS =10V , R G =3.3Ω I D =4A --- 3 6 ns T r Rise Time --- 34 61 T d(off) Turn-Off Delay Time --- 23 46 T f Fall Time --- 6 12 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 1027 1438 pF C oss Output Capacitance --- 65 91 C rss Reverse Transfer Capacitance --- 46 64 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 4.5 A I SM Pulsed Source Current 2,6 --- --- 18 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =4A , dI/dt=100A/µs , T J =25℃ --- 12.1 --- nS Q rr Reverse Recovery Charge --- 6.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics UM6014

N-Ch 60V Fast Switching MOSFETs 00 . 511 . 522 . 5 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =4A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistanc e Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM6014

N-Ch 60V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 2 5 V DS Drain to Source Voltage(V) Capacitance(pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UM6014