UM3301

UM3301 UNITPOWER | Alldatasheet

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z Power management in half bridge and inverters z DC-DC Converter z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D V GS =10V , I D =10A --- 15 20 R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =8A --- 22 30 mΩ V GS(th) Gate Threshold Voltage 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =250uA --- -5.8 --- mV/℃ V DS =30V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =30V , V GS =0V , T J =55℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =15V , I D =10A --- 10 --- S R g Gate Resistance V DS =24V , V GS Q g Total Gate Charge (4.5V) --- 7.2 --- Q gs Gate-Source Charge --- 1.4 --- Q gd Gate-Drain Charge V DS =20V , V GS =4.5V , I D =10A --- 2.2 --- nC T d(on) Turn-On Delay Time --- 4.1 --- T r Rise Time --- 9.8 --- T d(off) Turn-Off Delay Time --- 15.5 --- T f Fall Time V DD =12V , V GS =10V , R G =3.3Ω I D =5A --- 6.0 --- ns C iss Input Capacitance --- 550 --- C oss Output Capacitance --- 68 --- C rss Reverse Transfer Capacitance V DS =25V , V GS =0V , f=1MHz --- 55 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =10A 16 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- 10 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- 20 A V SD Diode Forward Voltage V GS =0V , I S =5A , T J =25℃ --- --- 1.2 V N-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D V GS =-10V , I D =-6A --- 35 45 R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-3A --- 65 85 mΩ V GS(th) Gate Threshold Voltage -1.0 -1.5 -2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =-250uA --- 0.375 --- mV/℃ V DS =-24V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =55℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-10V , I D =-6A --- 6 --- S Q g Total Gate Charge (-4.5V) --- 6.4 --- Q gs Gate-Source Charge --- 2.7 --- Q gd Gate-Drain Charge V DS =-20V , V GS =-4.5V , I D =-6A --- 3.1 --- nC T d(on) Turn-On Delay Time --- 9 --- T r Rise Time --- 16.6 --- T d(off) Turn-Off Delay Time --- 21 --- T f Fall Time V DD =-12V , V GS =-10V , R G =3.3Ω, I D =-5A --- 21.6 --- ns C iss Input Capacitance --- 645 --- C oss Output Capacitance --- 272 --- C rss Reverse Transfer Capacitance V DS =-25V , V GS =0V , f=1MHz --- 105 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- -6 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- -12 A V SD Diode Forward Voltage V GS =0V , I S =-6A , T J P-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-19A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs 00 . 511 . 5 V DS Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =10A 0 0.3 0.6 0.9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150℃ T J =25℃ 1.5 4.5 02 . 557 . 5 1 0 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) V DS =20V I D =10A 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃) Normalized V GS(th) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 V DS (V) I D (A) 10us 100us 10ms 100ms DC T C =25℃ Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.02 0.1 0.2 DUTY=0.5 0.001 P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.05 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 2 DS , Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-3V 117 144 2468 1 0 GS (V) R DSON (mΩ) ID=-10A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 048 1 2 Q G , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-20V I D =-6A 0.2 0.6 1.4 1.8 - 5 005 0 1 0 0 1 5 0 T J ,Junction Temperature (℃) Normalized -V GS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 DS (V) D (A) T C =25 Single Pulse DC 100ms 10ms 1ms 100us 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T Jpeak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform