UM3203 UNITPOWER | Alldatasheet
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z H i g h F r e q u e n c y P o i n t - o f - L o a d S y n c h r o n o u s Buck Converter for MB/NB/UMPC/VGA z N e t w o r k i n g D C - D C P o w e r S y s t e m z L o a d S w i t c h Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery BV DSS R DS(ON)
Dual P-Ch 30V Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BV DSS Temperature Coefficient Reference to 25ć, I D R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =-10V , I D =-6A --- 20 25 V GS =-4.5V , I D =-4A --- 32 42 V GS(th) G a t e T h r e s h o l d V o l t a g e V GS DS , I D =-250uA -1.0 -1.5 -2.5 V ϦV GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/ć I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =-24V , V GS =0V , T J =25ć --- --- -1 uA V DS =-24V , V GS =0V , T J =55ć --- --- -5 I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =-5V , I D =-6A --- 17 --- S R g G a t e R e s i s t a n c e V DS =0V , V GS Q g T o t a l G a t e C h a r g e ( - 4 . 5 V ) V DS =-15V , V GS =-4.5V , I D =-6A --- 12.6 17.6 nC Q gs G a t e - S o u r c e C h a r g e - - - 4 . 8 6 . 7 Q gd Gate-Drain Charge --- 4.8 6.7 T d(on) T u r n - O n D e l a y T i m e V DD =-15V , V GS =-10V , R G =3.3:, I D =-6A --- 4.6 9.2 ns T r R i s e T i m e - - - 1 4 . 8 2 6 . 6 T d(off) T u r n - O f f D e l a y T i m e - - - 4 1 8 2 T f F a l l T i m e - - - 1 9 . 6 3 9 . 2 C iss I n p u t C a p a c i t a n c e V DS =-15V , V GS =0V , f=1MHz --- 1345 1883 pF C oss O u t p u t C a p a c i t a n c e - - - 1 9 4 2 7 2 C rss R e v e r s e T r a n s f e r C a p a c i t a n c e - - - 1 5 8 2 2 1 Symbol Parameter ʳ Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,6 V G D =0V , Force Current --- --- -6.5 A I SM P u l s e d S o u r c e C u r r e n t 2,6 V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =-1A , T J t rr R e v e r s e R e c o v e r y T i m e I F =-6A , dI/dt=100A/µs , T J =25ć --- 16.3 --- nS Q rr R e v e r s e R e c o v e r y C h a r g e - - - 5 . 9 - - - n C Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 3 0 0 u s , d u t y c y c l e 2 % 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-38A 4.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25ć, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UM3203
Dual P-Ch 30V Fast Switching MOSFETs 468 1 0 GS (V) R DSON (mȍ) I D =-6A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150к T J =25к 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( к) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (к) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM3203
Dual P-Ch 30V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 2 5 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R șJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR șJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UM3203