UM3015

UM3015 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery BV RDDSS S(ON)

P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-10V , I D =-10A --- 8 10.5 mΩ V GS =-4.5V , I D =-8A --- 14 18.5 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -1.2 -1.6 -2.5 V GS(th) V GS(th) Temperature Coefficient --- 5.04 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃ --- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-5V , I D =-10A --- 25 --- S Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-10A --- 30 42 nC Q gs Gate-Source Charge --- 10 14 Q gd Gate-Drain Charge --- 10.4 14.6 T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V , R G =3.3Ω, I D =-10A --- 9.4 19 ns T r Rise Time --- 10.2 18 T d(off) Turn-Off Delay Time --- 117 234 T f Fall Time --- 24 48 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 3448 4827 pF C oss Output Capacitance --- 508 711 C rss Reverse Transfer Capacitance --- 421 589 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- -10 A I SM Pulsed Source Current 2,6 --- --- -40 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J t rr Reverse Recovery Time I F =-10A , dI/dt=100A/µs , T J =25℃ --- 19.4 --- nS Q rr Reverse Recovery Charge --- 9.1 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-55.4A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UM3015

P-Ch 30V Fast Switching MOSFETs 01234 DS , Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-3V 2468 1 0 GS (V) R DSON (mΩ) I D =-10A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM3015

P-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 DS , Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 DS (V) D (A) T A =25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UM3015