UM2601

UM2601 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data Dual SOP8 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =7A --- 15 18 mΩ V GS =2.5V , I D =5A --- 20 25 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 0.5 0.8 1.2 V GS(th) V GS(th) Temperature Coefficient --- -3.58 --- mV/℃ I DSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±12V , V DS gfs Forward Transconductance V DS =5V , I D =7A --- 32.4 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 1.5 3 Ω Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =7A --- 11.4 16.0 nC Q gs Gate-Source Charge --- 1.63 2.3 Q gd Gate-Drain Charge --- 2.95 4.1 T d(on) Turn-On Delay Time V DD =10V , V GS =10V , R G =3.3Ω I D =7A --- 4.8 9.6 ns T r Rise Time --- 61 110 T d(off) Turn-Off Delay Time --- 28 56 T f Fall Time --- 8 16 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 865 1211 pF C oss Output Capacitance --- 86 120 C rss Reverse Transfer Capacitance --- 72 101 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 7.2 A I SM Pulsed Source Current 2,4 --- --- 35 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =7A , dI/dt=100A/µs , T J =25℃ --- 12.5 --- nS Q rr Reverse Recovery Charge --- 4.4 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-4A --- 40 50 mΩ V GS =-2.5V , I D =-1.5A --- 58 72 V GS(th) Gate Threshold Voltage V GS DS , I D GS(th) V GS(th) Temperature Coefficient --- 3.95 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =-16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±12V , V DS gfs Forward Transconductance V DS =-5V , I D =-4A --- 12 --- S Q g Total Gate Charge (4.5V) V DS =-15V , V GS =-4.5V , I D =-4A --- 10 14.0 nC Q gs Gate-Source Charge --- 1.93 2.7 Q gd Gate-Drain Charge --- 3.18 4.5 T d(on) Turn-On Delay Time V DD =-10V , V GS =-4.5V , R G =3.3Ω I D =-4A --- 5.6 11.2 ns T r Rise Time --- 47.4 85 T d(off) Turn-Off Delay Time --- 31.6 63 T f Fall Time --- 17.2 34.4 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 857 1200 pF C oss Output Capacitance --- 114 160 C rss Reverse Transfer Capacitance --- 108 151 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- -4.5 A I SM Pulsed Source Current 2,4 --- --- -23 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ --- --- -1 V t rr Reverse Recovery Time I F =-4A , dI/dt=100A/µs , T J =25℃ --- 19.7 --- nS Q rr Reverse Recovery Charge --- 5.2 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs 00 . 511 . 522 . 53 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =4.5V V GS =3V V GS =2.5V V GS =1.8V V GS =5V 12345 V GS (V) R DSON (mΩ) I D =7A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 V DS (V) I D (A) T A =25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

N-Ch and P-Ch Fast Switching MOSFETs 110 130 150 170 13579 1 1 V GS (V) R DSON (mΩ) I D =4A 0 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature ( Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 DS (V) C (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform