UM2427

UM2427 UNITPOWER | Alldatasheet

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z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery BV DSS R DS(ON)

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-10A --- 7.2 9 mΩ V GS =-2.5V , I D =-8A --- 9.5 11.5 V GS =-1.8V , I D =-6A --- 12.5 15 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -0.3 -0.5 -1.0 V GS(th) V GS(th) Temperature Coefficient --- 2.94 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-20V , V GS =0V , T J =25℃ --- --- 1 uA I GSS Gate-Source Leakage Current V GS =±8V , V DS gfs Forward Transconductance V DS =-5V , I D =-10A --- 43 --- S Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-10A --- 63 --- nC Q gs Gate-Source Charge --- 9.1 --- Q gd Gate-Drain Charge --- 13 --- T d(on) Turn-On Delay Time V DD =-10V , V GS =-4.5V , R G =3.3Ω, I D =-10A --- 15.8 --- ns T r Rise Time --- 76.8 --- T d(off) Turn-Off Delay Time --- 193 --- T f Fall Time --- 186.4 --- C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 5783 --- pF C oss Output Capacitance --- 509 --- C rss Reverse Transfer Capacitance --- 431 --- Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- -10.7 A I SM Pulsed Source Current 2,4 --- --- -60 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J t rr Reverse Recovery Time I F=-10A , dI/dt=100A/µs , T J =25℃ --- 27 --- nS Q rr Reverse Recovery Charge --- 17.8 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics UM2427

P-Ch 20V Fast Switching MOSFETs 01345 GS (V) RDSON (mΩ) I D =-14A 0 0.3 0.6 0.9 1.2 SD , Source-to-Drain Voltage (V) S , Source Current (A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 Tj ,Junction Temperature ( ℃) Normalized -V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistanc s Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM2427

P-Ch 20V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 V DS Drain to Source Voltage(V) Capacitance(pF) F=1.0MHz Ciss Coss Crss 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA P DM D = T ON T J peak = T A + P DM x R θJA T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UM2427