UI01N65 UNITPOWER | Alldatasheet
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z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter Absolute Maximum Ratings Thermal Data TO251 Pin Configuration Product Summery Rev A.01 D051711 BV DSS R DS(ON)
機密 第 2 頁 2011-05-25 - 2 - N-Ch 650V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 2 --- 5 V GS(th) V GS(th) Temperature Coefficient --- -6.4 --- mV/℃ I DSS Drain-Source Leakage Current V DS =520V , V GS =0V , T J =25℃ --- --- 2 uA I GSS Gate-Source Leakage Current V GS =±30V , V DS gfs Forward Transconductance V DS =10V , I D =0.5A --- 1 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (10V) V DS =520V , V GS =10V , I D =1A --- 6.03 8.4 nC Q gs Gate-Source Charge --- 1.95 2.7 Q gd Gate-Drain Charge --- 2.3 3.2 T d(on) Turn-On Delay Time V DD =300V , V GS =10V , R G =10Ω, I D =1A --- 4.4 8.8 ns T r Rise Time --- 18.4 33 T d(off) Turn-Off Delay Time --- 7.2 29 T f Fall Time --- 22.4 45 C iss Input Capacitance V DS =25V , V GS =0V , F=1MHz --- 175 245 pF C oss Output Capacitance --- 17.8 25 C rss Reverse Transfer Capacitance --- 4.3 6 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =50V , L=79mH , I AS =1A 40 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 1.2 A I SM Pulsed Source Current 2,6 --- --- 2.4 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1 V t rr Reverse Recovery Time I F =1A , dI/dt=100A/µs , T J =25℃ --- 181 --- nS Q rr Reverse Recovery Charge --- 336 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =50V,V GS =10V,L=79mH,I AS =1.3A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UI01N65
機密 第 3 頁 2011-05-25 - 3 - N-Ch 650V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UI01N65
機密 第 4 頁 2011-05-25 - 4 - N-Ch 650V Fast Switching MOSFETs 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY =0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UI01N65