UF3N065300 UNITEDSIC | Alldatasheet

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Features

w Typical on-resistance RDS(on),typ of 265mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance Package Die on tape w RoHS compliant w Over Current Protection Circuits w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Part Number UF3N065300Z UF3N065300 Undiced wafer UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. 650V-265mW SiC Normally-on JFET DATASHEET UF3N065300Z Datasheet: UF3N065300Z Rev. B, January 2020 1

-20 to +3 V -20 to +20 V 10 A 7.8 A IDM 18 A TJ,max 175 °C TJ, TSTG -55 to 175 °C 1. +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W. 2. Limited by TJ,max 3. Assumes a maximum junction-to-case thermal resistance of 1.8°C/W 4. Pulse width tp limited by TJ,max 5. Package limited Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Min Typ Max BVDS 650 V 0.8 5 0.1 1 mA 0.5 mA 210 265 340 345 420 RG 5.7 W DCGate-source voltage VGS VGS=-20V, TJ=25°C Total gate leakage current IGSS ID TC = 100°CContinuous drain current 2,3 VGS=-20V, TJ=175°C AC 1 Maximum junction temperature 5 Operating and storage temperature TC = 25°C Pulsed drain current 3,4 TC = 25°C Drain-source breakdown voltage VGS=-20V, ID=1mA VDS=650V, VGS=-20V, TJ=25°C VDS=650V, VGS=-20V, TJ=175°C Parameter Symbol Parameter Test Conditions Drain-source voltage Test Conditions Value Units mATotal drain leakage current IDSS Drain-source on-resistance RDS(on) mW Gate threshold voltage VDS=5V, ID=5.3mA Gate resistance f=1MHz, open drain VGS=0V, ID=2A, TJ=25°C VGS=2V, ID=2A, TJ=175°C VGS=2V, ID=2A, TJ=25°C VGS=0V, ID=2A, TJ=175°C Datasheet: UF3N065300Z Rev. B, January 2020 2

Typical Performance - Dynamic Min Typ Max Ciss 187 Coss 27 Crss 24 Coss(er) 22 pF Eoss 1.7 mJ QG 22 QGD 12 QGS 5 td(on) 5 tr 15 td(off) 7 tf 7 EON 23 EOFF 5 ETOTAL 28 td(on) 5 tr 13 td(off) 6 tf 7 EON 19 EOFF 4 ETOTAL 23 Value Units Reverse transfer capacitance Effective output capacitance, energy related VDS=0V to 400V, VGS=-20V pF Parameter Symbol Test Conditions Input capacitance Output capacitance VDS=100V, VGS=-20V f=100kHz Rise time Turn-off delay time Gate-source charge Gate-drain charge VDS=400V, ID=5A, VGS = -18V to 0V nC Total gate charge Total switching energy Turn-on delay time VDS=400V, ID=5A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: UJ3D06504TS TJ=150°C ns Rise time Turn-off delay time COSS stored energy VDS=400V, VGS=-20V mJ ns Turn-off energy Fall time Turn-on energy VDS=400V, ID=5A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: UJ3D06504TS TJ=25°C Turn-on delay time Fall time Turn-on energy mJTurn-off energy Total switching energy Datasheet: UF3N065300Z Rev. B, January 2020 3

Mechanical Characteristics Chip Dimensions Disclaimer Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. Gross die per wafer 12620 Gate pad metal dimensions (L x W) 0.152 x 0.156 mm Source metallization (AlCu) 5 mm Die thickness 150 mm Wafer size 150 mm Gate metallization (AlCu) 5 mm Backside drain metallization (Ti/Ni/Ag) 0.1/0.2/1 mm Frontside passivation UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Polyimide Units Die dimensions with scribe line (L x W) 1.070 x 1.075 mm Scribe line width 80 mm Source pad metal dimensions (L x W) 0.820 x 0.620 mm Parameter Typical Value 1.075 1.070 0.820 0.620 0.152 0.156 0.0510.124Unit: mm Datasheet: UF3N065300Z Rev. B, January 2020 8