UF3C065030B3 UNITEDSIC | Alldatasheet

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United Silicon Carbide's cascode products co-package its high- performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive. w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number Marking UF3C065030B3 UF3C065030B3 DATASHEET UF3C065030B3 TAB D (2) S (3) G (1) TAB 1 3 Datasheet: UF3C065030B3 Rev. A, March 2019 1

TJ,max 175 °C TJ, TSTG -55 to 175 °C TL 250 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Min Typ Max RqJC 0.48 0.62 °C/W UnitsParameter Symbol Test Conditions Value Thermal resistance, junction-to-case Gate-source voltage DC Max. lead temperature for soldering, 1/8” from case for 5 seconds Power dissipation TC = 25°C Maximum junction temperature Operating and storage temperature TC = 25°C Pulsed drain current 2 TC = 25°C Single pulsed avalanche energy 3 L=15mH, IAS =4A ID TC = 100°CContinuous drain current 1 Parameter Test Conditions Drain-source voltage Datasheet: UF3C065030B3 Rev. A, March 2019 2

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Min Typ Max BVDS 650 V 6 150 IGSS 6 20 mA 27 35 VG(th) 4 5 6 V RG 4.5 W Typical Performance - Reverse Diode Min Typ Max IS 65 A IS,pulse 230 A 1.3 1.4 1.35 Qrr 211 nC trr 34 ns Qrr 188 nC trr 32 ns Reverse recovery charge Reverse recovery charge Reverse recovery time VR=400V, IF=40A, VGS=-5V, RG_EXT=22W di/dt=1500A/ms, TJ=25°C VR=400V, IF=40A, VGS=-5V, RG_EXT=22W di/dt=1500A/ms, TJ=150°CReverse recovery time Drain-source on-resistance RDS(on) mW Parameter Symbol Test Conditions Value Units Gate threshold voltage VDS=5V, ID=10mA Gate resistance f=1MHz, open drain Forward voltage VFSD VGS=0V, IF=20A, TJ=25°C V VGS=0V, IF=20A, TJ=175°C Diode continuous forward current 1 TC=25°C Diode pulse current 2 TC=25°C Drain-source breakdown voltage VGS=0V, ID=1mA VDS=650V, VGS=0V, TJ=25°C VDS=650V, VGS=0V, TJ=175°C Parameter Symbol Test Conditions Value Units mATotal drain leakage current IDSS Total gate leakage current VDS=0V, TJ=25°C, VGS=-20V / +20V VGS=12V, ID=40A, TJ=25°C VGS=12V, ID=40A, TJ=175°C Datasheet: UF3C065030B3 Rev. A, March 2019 3

Typical Performance - Dynamic Min Typ Max Ciss 1500 Coss 293 Crss 2 Coss(er) 215 pF Coss(tr) 480 pF Eoss 17.5 mJ QG 51 QGD 11 QGS 19 td(on) 34 tr 16 td(off) 56 tf 15 EON 392 EOFF 113 ETOTAL 505 ERS_ON 5.3 ERS_OFF 7.9 td(on) 32 tr 16 td(off) 57 tf 16 EON 370 EOFF 118 ETOTAL 488 ERS_ON 4.6 ERS_OFF 8.2 4. The switching performance are evaluated with a RC snubber circuit as shown in Figure 24. Gate-source charge Gate-drain charge VDS=400V, ID=40A, VGS = -5V to15V nC Total gate charge Total switching energy including RS energy4 Turn-on delay time VDS=400V, ID=40A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.8W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 22W, RC snubber: RS=5W and CS=330pF, TJ=150°C ns Rise time Turn-off delay time Fall time Turn-on energy including RS energy4 mJ Turn-off energy including RS energy4 Total switching energy including RS energy4 Snubber RS energy during turn-on Snubber RS energy during turn-off Snubber RS energy during turn-on Snubber RS energy during turn-off Effective output capacitance, time related VDS=0V to 400V, VGS=0V COSS stored energy VDS=400V, VGS=0V ns Turn-off energy including RS energy4 Fall time Turn-on energy including RS energy4 Turn-on delay time Rise time Turn-off delay time VDS=400V, ID=40A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.8W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 22W, RC snubber: RS=5W and CS=330pF, TJ=25°C mJ Value Units Reverse transfer capacitance Effective output capacitance, energy related VDS=0V to 400V, VGS=0V pF Parameter Symbol Test Conditions Input capacitance Output capacitance VDS=100V, VGS=0V f=100kHz Datasheet: UF3C065030B3 Rev. A, March 2019 4

more information on cascode operation, see www.unitedsic.com. specifications without prior notice. United Silicon Carbide, Inc. Figure 24. Clamped inductive load switching test circuit An RC snubber (RS = 5W and CS = 330pF) is required to improve the turn-off waveforms. eliminating the need for an external anti-parallel diode. property rights is granted within this document. to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein.