UF3C120400K3S

UF3C120400K3S UNITEDSIC | Alldatasheet

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This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive. 1200V-410mW SiC FET w ESD protected, HBM class 2 w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating w Typical on-resistance RDS(on),typ of 410mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance Part Number Marking UF3C120400K3S UF3C120400K3S w EV charging DATASHEET UF3C120400K3S CASE 1 2 CASE D (2) S (3) G (1) Datasheet: UF3C120400K3S Rev. A, January 2020 1

7.6 A 5.9 A IDM 14 A EAS 11.7 mJ Ptot 100 W TJ,max 175 °C TJ, TSTG -55 to 175 °C TL 250 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Min Typ Max RqJC 1.2 1.5 °C/W UnitsParameter Symbol Test Conditions Value Thermal resistance, junction-to-case Gate-source voltage DC Max. lead temperature for soldering, 1/8” from case for 5 seconds Power dissipation TC = 25°C Maximum junction temperature Operating and storage temperature TC = 25°C Pulsed drain current 2 TC = 25°C Single pulsed avalanche energy 3 L=15mH, IAS =1.25A ID TC = 100°CContinuous drain current 1 Parameter Test Conditions Drain-source voltage Datasheet: UF3C120400K3S Rev. A, January 2020 2

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Min Typ Max BVDS 1200 V 0.4 60 IGSS 6 20 mA 410 515 1070 VG(th) 3 4.7 6 V RG 4.1 W Typical Performance - Reverse Diode Min Typ Max IS 7.6 A IS,pulse 14 A 1.5 1.75 2.4 Qrr 51 nC trr 24 ns Qrr 52 nC trr 24 ns Reverse recovery charge Reverse recovery charge Reverse recovery time VR=800V, IF=5A, VGS=-5V, RG_EXT=10W di/dt=4000A/ms, TJ=25°C VR=800V, IF=5A, VGS=-5V, RG_EXT=10W di/dt=4000A/ms, TJ=150°CReverse recovery time Drain-source on-resistance RDS(on) mW Parameter Symbol Test Conditions Value Units Gate threshold voltage VDS=5V, ID=10mA Gate resistance f=1MHz, open drain VGS=12V, ID=5A, TJ=25°C VGS=12V, ID=5A, TJ=175°C Forward voltage VFSD VGS=0V, IF=2A, TJ=25°C V VGS=0V, IF=2A, TJ=175°C Diode continuous forward current 1 TC=25°C Diode pulse current 2 TC=25°C VDS=1200V, VGS=0V, TJ=25°C VDS=1200V, VGS=0V, TJ=175°C Parameter Symbol Test Conditions Value Units mATotal drain leakage current IDSS Drain-source breakdown voltage VGS=0V, ID=1mA Total gate leakage current VDS=0V, TJ=25°C, VGS=-20V / +20V Datasheet: UF3C120400K3S Rev. A, January 2020 3

Typical Performance - Dynamic Min Typ Max Ciss 740 Coss 27 Crss 2 Coss(er) 17.5 pF Coss(tr) 36 pF Eoss 5.6 mJ QG 27 QGD 6 QGS 10 td(on) 17 tr 10 td(off) 34 tf 17 EON 104 EOFF 22 ETOTAL 126 td(on) 16 tr 9 td(off) 34 tf 18 EON 91 EOFF 23 ETOTAL 114 Gate-source charge Gate-drain charge VDS=800V, ID=5A, VGS = -5V to15V nC Total gate charge Total switching energy Turn-on delay time VDS=800V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150°C ns Rise time Turn-off delay time Fall time Turn-on energy mJTurn-off energy Total switching energy VDS=0V to 800V, VGS=0V COSS stored energy Effective output capacitance, time related VDS=800V, VGS=0V ns Turn-off energy Fall time Turn-on energy Turn-on delay time Rise time Turn-off delay time VDS=800V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25°C mJ Value Units Reverse transfer capacitance Effective output capacitance, energy related VDS=0V to 800V, VGS=0V pF Parameter Symbol Test Conditions Input capacitance Output capacitance VDS=100V, VGS=0V f=100kHz Datasheet: UF3C120400K3S Rev. A, January 2020 4