UD6008

UD6008 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =10A --- 70 90 mΩ V GS =4.5V , I D =8A --- 80 100 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.2 --- 2.5 V GS(th) V GS(th) Temperature Coefficient --- -4.96 --- mV/℃ I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =10A --- 7.6 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (4.5V) V DS =48V , V GS =4.5V , I D =10A --- 4.9 6.9 nC Q gs Gate-Source Charge --- 1.8 2.52 Q gd Gate-Drain Charge --- 2.2 3.1 T d(on) Turn-On Delay Time V DD =30V , V GS =10V , R G =3.3Ω, I D =10A --- 1.6 3.2 ns T r Rise Time --- 7.4 13 T d(off) Turn-Off Delay Time --- 17.6 35 T f Fall Time --- 4 8 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 511 715 pF C oss Output Capacitance --- 38 53 C rss Reverse Transfer Capacitance --- 25 35 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =5A 2.5 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 10 A I SM Pulsed Source Current 2,6 --- --- 20 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =10A , dI/dt=100A/µs , T J =25℃ --- 9.7 --- nS Q rr Reverse Recovery Charge --- 6.1 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =11.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6008

N-Ch 60V Fast Switching MOSFETs 0 0.5 1 1.5 2 2.5 3 3.5 4 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 100 2468 1 0 V GS (V) R DSON (mΩ) ID=10A 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J UD6008

N-Ch 60V Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UD6008