UD6001

UD6001 UNITPOWER | Alldatasheet

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z Power management in half bridge and inverters z DC-DC Converter z LCD / LED Backlight Application Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D V GS =-10V , I D =-8A --- 98 110 R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-6A --- 140 160 mΩ V GS(th) Gate Threshold Voltage -1.0 -2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =-250uA --- 5.42 --- mV/℃ V DS =-48V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =-48V , V GS =0V , T J =150℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-5V , I D =-5A --- 5.8 --- S Q g Total Gate Charge (-4.5V) --- 5.85 --- Q gs Gate-Source Charge --- 2.92 --- Q gd Gate-Drain Charge V DS =-20V , V GS =-4.5V , I D =-5A --- 1.8 --- nC T d(on) Turn-On Delay Time --- 10 --- T r Rise Time --- 17 --- T d(off) Turn-Off Delay Time --- 22 --- T f Fall Time V DD =-12V , V GS =-10V , R G =3.3Ω, I D =-5A --- 21 --- ns C iss Input Capacitance --- 715 --- C oss Output Capacitance --- 51 --- C rss Reverse Transfer Capacitance V DS =-15V , V GS =0V , F=1MHz --- 34 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS =-10A 8 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- -11.5 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- -23 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-20A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6001

P-Ch 60V Fast Switching MOSFETs 00 . 511 . 52 DS , Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-4V 110 145 180 215 2468 1 0 GS (V) RDSON (mΩ) I D =-5A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 2.5 7.5 0 3.5 7 10.5 14 QG , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-12V I D =-5A 0.2 0.6 1.4 1.8 - 5 005 0 1 0 0 1 5 0 T J ,Junction Temperature (℃) Normalized -V GS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD6001

P-Ch 60V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 25 DS (V) Capatince (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 1000 DS (V) D (A) 10us 100us 10ms 100ms DC T C =25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T Jpeak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform UD6001