UD4803

UD4803 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D V GS =10V , I D =12A --- 22 26 R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =10A --- 28 35 mΩ V GS(th) Gate Threshold Voltage 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =250uA --- -4.56 --- mV/℃ V DS =32V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =32V , V GS =0V , T J =55℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =12A --- 8 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (4.5V) --- 5.5 --- Q gs Gate-Source Charge --- 1.25 --- Q gd Gate-Drain Charge V DS =20V , V GS =4.5V , I D =12A --- 2.5 --- nC T d(on) Turn-On Delay Time --- 8.9 --- T r Rise Time --- 2.2 --- T d(off) Turn-Off Delay Time --- 41 --- T f Fall Time V DD =20V , V GS =10V , R G =3.3Ω I D =1A --- 2.7 --- ns C iss Input Capacitance --- 593 --- C oss Output Capacitance --- 76 --- C rss Reverse Transfer Capacitance V DS =15V , V GS =0V , f=1MHz --- 56 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =10A 9 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- 23 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- 46 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =17.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD4803

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D V GS =-10V , I D =-8A --- 32 40 R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-4A --- 52 65 mΩ V GS(th) Gate Threshold Voltage -1.0 -1.6 -2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =-250uA --- 4.32 --- mV/℃ V DS =-32V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =-32V , V GS =0V , T J =55℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-5V , I D R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 13 16 Ω Q g Total Gate Charge (-4.5V) --- 9 --- Q gs Gate-Source Charge --- 2.54 --- Q gd Gate-Drain Charge V DS =-20V , V GS =-4.5V , I D =-12A --- 3.1 --- nC T d(on) Turn-On Delay Time --- 19.2 --- T r Rise Time --- 12.8 --- T d(off) Turn-Off Delay Time --- 48.6 --- T f Fall Time V DD =-15V , V GS =-10V , R G =3.3Ω, I D =-1A --- 4.6 --- ns C iss Input Capacitance --- 1004 --- C oss Output Capacitance --- 108 --- C rss Reverse Transfer Capacitance V DS =-15V , V GS =0V , f=1MHz --- 80 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- -20 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- -40 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ --- --- -1 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD4803

N-Ch and P-Ch Fast Switching MOSFETs 00 . 511 . 52 V DS Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =12A V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 048 1 2 1 6 Q G , Total Gate Charge (nC) V GS Gate to Source Voltage (V) V DS =20V I D =12A 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.5 0.8 1.1 1.4 1.7 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD4803

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 V DS (V) I D (A) 10us 100us 10ms 100ms DC T C =25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM D = Ton/T Tj peak = TC + PDM x Rthjc Ton T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave UD4803

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 2 DS Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-3V 2468 1 0 GS (V) R DSON (mΩ) I D =-12A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0 6 12 18 Q G , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-20V I D =-12A 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( ℃) Normalized -V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J UD4803

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 DS (V) D (A) Tc=25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform UD4803 UD4803