UD3001K

UD3001K UNITPOWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

Applications

z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-10V , I D =-3A --- 42 52 mΩ V GS =-4.5V , I D =-2A --- 75 90 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -1.2 -1.6 -2.5 V GS(th) V GS(th) Temperature Coefficient --- 4 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃ --- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-5V , I D =-3A --- 11 --- S Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-3A --- 6.4 9.0 nC Q gs Gate-Source Charge --- 2.3 3.2 Q gd Gate-Drain Charge --- 1.9 2.7 T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V , R G =3.3Ω, I D =-3A --- 2.8 5.6 ns T r Rise Time --- 8.4 15.1 T d(off) Turn-Off Delay Time --- 39 78.0 T f Fall Time --- 6 12.0 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 583 816 pF C oss Output Capacitance --- 100 140 C rss Reverse Transfer Capacitance --- 80 112 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- -3.3 A I SM Pulsed Source Current 2,4 --- --- -17 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ --- --- -1 V t rr Reverse Recovery Time I F =-3A , dI/dt=100A/µs , T J =25℃ --- 7.8 --- nS Q rr Reverse Recovery Charge --- 2.5 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics UD3001K

P-Ch 30V Fast Switching MOSFETs 105 135 165 2468 1 0 GS (V) R DSON (mΩ) I D =-3A 0 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S - Source Current(A) T J =150℃ T J =25℃ 0.0 0.5 1.0 1.5 -50 0 50 100 150 T J ,Junction Temperature (℃) Normalized -V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized on resistanc e Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs T J UD3001K

P-Ch 30V Fast Switching MOSFETs 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA P DM D = T ON T Jpeak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UD3001K