UD0018 UNITPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Applications
z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z LED TV Back Light Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON) BV DSS R DS(ON)
N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =30A --- 18 22 mΩ V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 2.5 --- 4.5 V GS(th) V GS(th) Temperature Coefficient --- -5.5 --- mV/℃ I DSS Drain-Source Leakage Current V DS =80V , V GS =0V , T J =25℃ --- --- 1 uA V DS =80V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =30A --- 27 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (10V) V DS =80V , V GS =10V , I D =30A --- 27.6 38.6 nC Q gs Gate-Source Charge --- 11.4 16 Q gd Gate-Drain Charge --- 7.9 11.1 T d(on) Turn-On Delay Time V DD =50V , V GS =10V , R G =3.3Ω, I D =30A --- 15.6 31.2 ns T r Rise Time --- 17.2 31 T d(off) Turn-Off Delay Time --- 16.8 33.6 T f Fall Time --- 9.2 18.4 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 1890 2645 pF C oss Output Capacitance --- 268 375 C rss Reverse Transfer Capacitance --- 67 94 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =30A 53 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 45 A I SM Pulsed Source Current 2,6 --- --- 100 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =30A , dI/dt=100A/µs , T J =25℃ --- 34 --- nS Q rr Reverse Recovery Charge --- 47 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DS =25V,V GS =10V,L=0.1mH,I AS =41A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD0018
N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J UD0018
N-Ch 100V Fast Switching MOSFETs 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UD0018