UD0008

UD0008 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Application Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =5A --- 260 310 mΩ V GS =4.5V , I D =3A --- 270 320 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -4.12 --- mV/℃ I DSS Drain-Source Leakage Current V DS =80V , V GS =0V , T J =25℃ --- --- 10 uA V DS =80V , V GS =0V , T J =55℃ --- --- 100 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =3A --- 5.4 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 2.5 5 Ω Q g Total Gate Charge (10V) V DS =80V , V GS =10V , I D =5A --- 9.6 13.4 nC Q gs Gate-Source Charge --- 1.83 2.56 Q gd Gate-Drain Charge --- 1.85 2.6 T d(on) Turn-On Delay Time V DD =50V , V GS =10V , R G =3.3Ω I D =5A --- 1.4 2.8 ns T r Rise Time --- 30.6 55 T d(off) Turn-Off Delay Time --- 11.2 22 T f Fall Time --- 6 12 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 508 711 pF C oss Output Capacitance --- 29 41 C rss Reverse Transfer Capacitance --- 16.4 23 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 5.4 A I SM Pulsed Source Current 2,4 --- --- 11 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =5A , dI/dt=100A/µs , T J =25℃ --- 20 --- nS Q rr Reverse Recovery Charge --- 19 --- nC Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. UD0008

N-Ch 100V Fast Switching MOSFETs 0.0 2.0 4.0 6.0 8.0 012345 V DS ,Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 0.5 1.5 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) (V) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T J , Junction Temperature ( ℃) Normalized On Resistanc e Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD0008

N-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.02 0.05 0.1 0.2 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T DUTY=0.5 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UD0008