UD0006 UNITPOWER | Alldatasheet
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z H i g h F r e q u e n c y P o i n t - o f - L o a d S y n c h r o n o u s Buck Converter z N e t w o r k i n g D C - D C P o w e r S y s t e m z P o w e r T o o l A p p l i c a t i o n Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery G S D D 15A BV DSS R DS(ON)
=6A --- 5 --- S UD0006 N-Ch 100V Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =10V , I D =6A --- 100 145 V GS =4.5V , I D =5A --- 150 195 V GS(th) G a t e T h r e s h o l d V o l t a g e V GS DS , I D =250uA 1.0 1.6 3.0 V ϦV GS(th) V GS(th) Temperature Coefficient --- -4.12 --- mV/ć I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =80V , V GS =0V , T J =25ć --- --- 1 uA --- --- --- I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =10V , I D R g G a t e R e s i s t a n c e V DS =0V , V GS Q g T o t a l G a t e C h a r g e ( 1 0 V ) V DS =50V , V GS =10V , I D =6A --- 7.8 nC Q gs G a t e - S o u r c e C h a r g e - - - 1 . 3 Q gd Gate-Drain Charge --- 2.9 T d(on) T u r n - O n D e l a y T i m e V DD =50V , V GS =10V , R G =6 : I D =1A --- 9.8 ns T r R i s e T i m e - - - 1 8 T d(off) Turn-Off Delay Time --- 8.5 T f F a l l T i m e - - - 1 0 . 2 C iss I n p u t C a p a c i t a n c e V DS =25V , V GS =0V , f=1MHz --- 480 pF C oss O u t p u t C a p a c i t a n c e - - - 4 7 C rss R e v e r s e T r a n s f e r C a p a c i t a n c e - - - 2 9 Symbol Parameter ʳ Conditions Min. Typ. Max. Unit V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =1A , T J =25ć --- 0.775 1.3 V Electrical Characteristics (T J =25ć, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 3 0 0 u s , d u t y c y c l e 2 % 3.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. --- --- --- --- --- --- --- --- --- ---