UB09N65

UB09N65 UNITPOWER | Alldatasheet

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Technical content

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Applications

z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter Absolute Maximum Ratings Thermal Data TO263 Pin Configuration Product Summery BV DSS R DS(ON) BV DSS R DS(ON)

機密 第 2 頁 2011-03-08 - 2 - N-Ch 650V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 2 --- 5 V GS(th) V GS(th) Temperature Coefficient --- -8.9 --- mV/℃ I DSS Drain-Source Leakage Current V DS =520V , V GS =0V , T J =25℃ --- --- 2 uA I GSS Gate-Source Leakage Current V GS =±30V , V DS gfs Forward Transconductance V DS =10V , I D =2.75A --- 7 --- S Q g Total Gate Charge (10V) V DS =520V , V GS =10V , I D =1A --- 33 --- nC Q gs Gate-Source Charge --- 9.5 --- Q gd Gate-Drain Charge --- 9.8 --- T d(on) Turn-On Delay Time V DD =300V , V GS =10V , R G =10Ω, I D =1A --- 19 --- ns T r Rise Time --- 19.4 --- T d(off) Turn-Off Delay Time --- 56.4 --- T f Fall Time --- 38 --- C iss Input Capacitance V DS =25V , V GS =0V , F=1MHz --- 1538 --- pF C oss Output Capacitance --- 100 --- C rss Reverse Transfer Capacitance --- 1.9 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =50V , L=1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 9 A I SM Pulsed Source Current 2,6 --- --- 18 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1 V t rr Reverse Recovery Time I F =1A , dI/dt=100A/µs , T J =25℃ --- 158 --- nS Q rr Reverse Recovery Charge --- 677 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =50V,V GS =10V,L=1mH,I AS =8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UB09N65

機密 第 3 頁 2011-03-08 - 3 - N-Ch 650V Fast Switching MOSFETs 048 1 2 1 6 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =5V V GS V V GS =8V V GS =10V V GS =6V 0.9 0.95 1.05 1.1 468 1 0 V GS (V) R DSON (Ω) I D =2.5A 0.5 1.5 2.5 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.4 1.0 1.6 2.2 2.8 -50 0 50 100 150 T J , Junction Temperature (℃) N orma li ze d O n R es i stance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UB09N65

機密 第 4 頁 2011-03-08 - 4 - N-Ch 650V Fast Switching MOSFETs 100 1000 10000 1 5 9 1 31 72 12 5 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 10000 V DS (V) I D (A) 10us 100us 10ms 100ms DC T C =25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UB09N65