U350 INTERFET | Alldatasheet
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Hybrid Quad Silicon Junction Field-Effect Transistor Array Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Gate Current 25 mA Continuous Device Power Dissipation 400 mW Power Derating 3.2 mW/°C TOÐ78 Package Dimensions in Inches (mm) Pin Configuration
1 Gate 1 & 3, 2 Drain 1 & 4,
3 Source 1 & 2, 4 Ground & Case,
5 Source 3 & 4, 6 Drain 2 & 3,
7 Gate 2 & 4, 8 Omitted
At 25°C free air temperature: U350 Four Matched Process NJ72L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 1 nA V GS = – 15V, VDS = ØV – 1 µA V GS = – 15V, VDS = ØV T A = 125°C Gate Source Cutoff Voltage V GS(OFF) – 2 – 6 V V DS = 10V, ID = 1 nA Gate Source Forward Voltage V GS(F) 1V V DS = ØV, I G = 1 mA Drain Saturation Current (Pulsed) I DSS 24 60 mA V DS = 15V, VGS = ØV Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 50 90 Ω VGS = ØV, I D = mA f = 1 kHz Common Source gfs 10 18 mS V DS = 10V, ID = 10 mA f = 1 kHzForward Transconductance Common Source Output Conductance g os 150 µS V DS = 10V, ID = 10 mA f = 1 kHz Drain Gate Capacitance C dgo 2.5 pF V GD = – 10V, IS = ØV f = 1 MHz Gate Source Capacitance C sgo 5p F V GS = – 10V, ID = ØV f = 1 MHz (Conversion Gain) G c 4d B VDS = 20V, VGS = 1/2 VGS(OFF) f = 100 MHzRD = 1,700 Ω Noise Figure NF 7 dB VDS = 20V, VGS = 1/2 VGS(OFF) f = 100 MHzRD = 1,700 Ω Saturation Drain Current Ratio I DSS / IDSS 0.9 1 V DS = 15V, VDS = ØV Gate Source Cutoff Voltage Ratio VGS(OFF) / VGS(OFF) 0.9 1 V DS = 15V, ID = 1 nA Common Source gfs / gfs 0.9 1 V DS = 15V, ID = 10 mA f = 1 kHzForward Transconductance Differential Output Conductance Y os / Yos 0.9 1 V DS = 15V, ID = 10 mA f = 1 kHz ¥ Analog Multiplier ¥ VHF Double-Balanced Mixer 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-69