U311 INTERFET | Alldatasheet
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N-Channel Silicon Junction Field-Effect Transistor ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C TOÐ72 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: U311 Process NJ72L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 150 pA V GS = – 15V, VDS = ØV – 150 nA V GS = – 15V, VDS = ØV T A = 150°C Gate Source Cutoff Voltage V GS(OFF) – 1 – 6 V V DS = 10V, ID = 1 nA Gate Source Forward Voltage V GS(F) 1V V DS = ØV, I G = 1 mA Drain Saturation Current (Pulsed) I DSS 20 60 mA V DS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Gate Forward Transconductance gfg 1000 17000 µS V DS = 10V, ID = 10 mA f = 1 kHz Common Gate Output Conductance g og 250 µS V DS = 10V, ID = 10 mA f = 1 kHz Gate Drain Capacitance C dg 2.5 pF V DS = 10V, ID = 10 mA f = 1 MHz Gate Source Capacitance C gs 5p F V DS = 10V, ID = 10 mA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-68