U310 INTERFET | Alldatasheet
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N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 20 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C TOÐ52 Package See Section G for Outline Dimensions Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: U310 Process NJ72L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 150 pA V GS = – 15V, VDS = ØV – 150 nA V GS = – 15V, VDS = ØV T A = 125°C Gate Source Cutoff Voltage V GS(OFF) – 2.5 – 6 V V DS = 10V, ID = 1 nA Gate Source Forward Voltage V GS(F) 1V V DS = ØV, I G = 10 mA Drain Saturation Current (Pulsed) I DSS 24 60 mA V DS = 10V, VGS = ØV Dynamic Electrical Characteristics 10 17 mS V DS = 10V, ID = 10 mA f = 1 kHz Common Gate Forward Transconductance gfg 15 mS V DS = 10V, ID = 10 mA f = 105 MHz 14 mS V DS = 10V, ID = 10 mA f = 450 MHz 250 µS V DS = 10V, ID = 10 mA f = 1 kHz Common Gate Output Conductance g og 0.18 µS V DS = 10V, ID = 10 mA f = 105 MHz 0.32 µS V DS = 10V, ID = 10 mA f = 450 MHz Drain Gate Capacitance C dg 2.5 pF V DS = 10V, VGS = – 10V f = 1 MHz Gate Source Capacitance C gs 5p F V DS = 10V, VGS = – 10V f = 1 MHz Equivalent Short Circuit ¯eN 10 nV/√Hz VDS = 10V, ID = 10 mA f = 100 HzInput Noise Voltage Common Gate Power Gain G pg 14 16 dB V DS = 10V, ID = 10 mA f = 105 MHz 10 11 dB V DS = 10V, ID = 10 mA f = 450 MHz Noise Figure NF 1.5 2 dB V DS = 10V, ID = 10 mA f = 105 MHz 2.7 3.5 dB V DS = 10V, ID = 10 mA f = 450 MHz ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/14/99 11:33 AM Page B-67