U290 INTERFET | Alldatasheet
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U290, U291 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 30 V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C TOÐ52 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: U290 U291 Process NJ1800D Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 30 – 30 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 1 – 1 nA V GS = – 15V, VDS = ØA – 1 – 1 µA V GS = – 15V, VDS = ØA T A = 150°C Gate Source Cutoff Voltage V GS(OFF) – 4 – 10 – 1.5 – 4.5 V V DS = 15V, ID = 3 nA Drain Saturation Current (Pulsed) I DSS 500 200 mA V DS = 10V, VGS = ØV Drain Cutoff Current I D(OFF) 11 n A V DS = 5V, VGS = – 10V 11 µ A V DS = 5V, VGS = – 10V T A = 150°C Drain Source ON Voltage V DS(ON) 30 70 mV V GS = ØV, I D = 10 mA Static Drain Source ON Resistance r DS(ON) 1327 Ω VGS = ØV, I D = 10 mA Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 1327 Ω VGS = ØV, I D = Ø f = 1 kHz Drain Gate OFF Capacitance C dgo 30 30 pF V DG = 15V, IS = ØV f = 1 MHz Source Gate OFF Capacitance C sgo 30 30 pF V DG = 15V, IS = ØV f = 1 MHz Source Gate Plus Drain Gate C iss 160 160 pF V DG = ØV, V GS = ØV f = 1 MHz Switching Characteristics VDD = 1.5V, ID(ON) = 30 mATurn ON Delay Time td (on) 15 15 ns RL = 50ΩRise Time t r 20 20 ns VGS(ON) = ØV Turn OFF Delay Time td (off) 15 15 ns (U290) VGS(OFF) = – 12 V Fall Time t f 20 20 ns (U291) VGS(OFF) = – 7V ¥ Choppers ¥ Low On Resistance Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-65