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N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Amplifier ∙ Low & Maximum Frequency Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating 1.7 mW/oC Storage Temperature Range -65oC to +150oC At 25oC free air temperature U232 Process NJ16 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS -50 V IG = -1 uA, VDS = 0 V Gate Reverse Current IGSS -0.1 nA VGS = -10 V, VDS = 0 V Gate Source Cutoff Voltage VGS(OFF) -0.5 -4.5 V VDS = 10 V, VGS = 0 V Drain Saturation Current (pulsed) IDSS 0.5 5 mA VDS = 10 V, VGS = 0 V Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs 1 3 mS VDS = 10 V, VGS = 0 V f = 1 kHz Common-Source Input Capacitance Ciss 6 pF VDS = 10V, ID = 5 mA f = 1 MHz Common-Source Reverse Transfer Capacitance Crss 2 pF VDS = 10 V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage ~eN 80 nV/√Hz VDS = 10 V, ID = 5 mA f = 100 Hz Matching Characteristics Min Max Units Test Conditions Differencial Gate-Source Voltage (VGS1-VGS2) 10 mV VDS = 10 V, ID = -10 mA Differencial Gate Source Voltage with Temperature Δ│VGS1- VGS2│ ΔT 25 μV/°C VDG = 10 V, ID = 30 μA www.interfet.com 715 N. Glenville Dr., Ste. 400 Richardson, TX 75089 (972) 238-9700 Fax (972) 238-5338 Surface Mount Version: SMPU232