TPD5030 SS | Alldatasheet

Document overview

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Technical content

ESD Protection Diode – TPD5030 Monolithic dual diode transient voltage suppressor in bare die form  Configures as x2 unidirectional or x1 bidirectional (x2 wire)  Very low leakage  Low capacitance  5V stand-off voltage  High reliability tested grades. Rev 1.0 29/11/20 Features:

Ordering Information

The following part suffixes apply:  No suffix - MIL-STD-750 /2073 Visual Inspection  “ H” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class H LAT  “ K” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification Supply Formats: Mechanical Specification 290 (11.42) 90 (3.54) (3.54) (3.54) CATHODE CATHODE 90 (3.54) 350 (13.78) CHIP BACK MUST BE CONNECTED TO ANODE NOTE: THIS MONOLITHIC CHIP COMPRISES X2 UNIDIRECTIONAL TVS DIODES WITH COMMON ANODE CONNECTION. Die Dimensions in µm (mils)  Default – Die in Waffle Pack (400 per tray capacity) Die Size (Unsawn) 290 x 350 11.42 x 13.78 µm mils Cathode Pad Size  Sawn Wafer on Tape – By specific request 90 x 90 3.54 x 3.54 µm mils Die Thickness  Unsawn Wafer – By specific request  Die Thickness <> 230µm( 9 Mils) – On request  With additional electrical selection – On request 230 (±15) 9.05 (±0.59) µm mils Top Metal Composition Al Back Metal Composition Si Page 1 of 3 www.siliconsupplies.com A ll data sheet.com

  1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

FIGURE 1. Bidirectional Configuration FIGURE 2. Peak Pulse Current Versus Time