Features

Document overview

  • Manufacturer or author: Jeff Haller
  • PDF pages: 13

Technical content

Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
  • Enhanced inrush current capability
  • Very low QRR
  • Reduced crossover loss Benefits
  • Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost
  • Achieves increased efficiency in both hard- and soft- switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 2 TP65H050G4WS Thermal Resistance Symbol Parameter Typical Unit RΘJC Junction-to-case 1.05 °C/W RΘJA Junction-to-ambient 40 °C/W Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55°C to 150°C) 650 V VDSS(TR) Transient drain to source voltage a 800 VGSS Gate to source voltage ±20 PD Maximum power dissipation @TC=25°C 119 W ID Continuous drain current @TC=25°C b 34 A Continuous drain current @TC=100°C b 22 A IDM Pulsed drain current (pulse width: 10µs) 150 A TC Operating temperature Case -55 to +150 °C TJ Junction -55 to +150 °C TS Storage temperature -55 to +150 °C TSOLD Soldering peak temperature c 260 °C - Mounting Torque 80 N cm Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30µs, non repetitive b. For increased stability at high current operation, see Circuit Implementation on page 3 c. For 10 sec., 1.6mm from the case

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 3 TP65H050G4WS Circuit Implementation Recommended gate drive: (0V, 12V) with RG= 45Ω Simplified Half-bridge Schematic ( See also on Figure 13) Required DC Link RC Snubber (RCDCL) a Recommended Switching Node RC Snubber (RCSN) Gate Ferrite Bead (FB1) [4.7nF + 5Ω] x 2 See note b and c below 240 — 300Ω at 100MHz Notes: a. RCDCL should be placed as close as possible to the drain pin b. RCSN is needed only if RG is smaller than recommendations c. If required, please use 15Ω+47pF Layout Recommendations: (See also AN0009) Gate Loop:

  • Gate Driver: SiLab Si823x/Si827x
  • Keep gate loop compact
  • Minimize coupling with power loop Power loop:
  • Minimize power loop path inductance
  • Minimize switching node coupling with high and low power plane
  • Add DC bus snubber to reduce to voltage ringing
  • Add Switching node snubber for high current operation

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 4 TP65H050G4WS Electrical Parameters (TJ=25°C unless otherwise stated) Symbol Parameter Min Typ Max Unit Test Conditions Forward Device Characteristics VDSS(BL) Drain-source voltage 650 — — V VGS=0V VGS(th) Gate threshold voltage 3.3 4 4.8 V VDS=VGS, ID=0.7mA ΔVGS(th)/TJ Gate threshold voltage temperature coefficient — -6.2 — mV/°C RDS(on)eff Drain-source on-resistance a — 50 60 mΩ VGS=10V, ID=22A — 105 — VGS=10V, ID=22A, TJ=150°C IDSS Drain-to-source leakage current — 4 40 µA VDS=650V, VGS=0V — 15 — VDS=650V, VGS=0V, TJ=150°C IGSS Gate-to-source forward leakage current — — 100 nA VGS=20V — — -100 VGS=-20V CISS Input capacitance — 1000 — pF VGS=0V, VDS=400V, f=1MHz COSS Output capacitance — 110 — CRSS Reverse transfer capacitance — 6 — CO(er) Output capacitance, energy related b — 164 — pF VGS=0V, VDS=0V to 400V CO(tr) Output capacitance, time related c — 280 — QG Total gate charge — 16 24 nC VDS=400V, VGS=0V to 10V, ID=22A QGS Gate-source charge — 6 — QGD Gate-drain charge — 5 — QOSS Output charge — 120 — nC VGS=0V, VDS=0V to 400V tD(on) Turn-on delay — 49.2 — ns VDS=400V, VGS=0V to 10V, ID=22A, Rg=45Ω, ZFB=240Ω at 100MHz (See Figure 14) tR Rise time — 11.3 — tD(off) Turn-off delay — 88.3 — tF Fall time — 10.9 — Notes: a. Dynamic on-resistance; see Figures 17 and 18 for test circuit and conditions b. Equivalent capacitance to give same stored energy as VDS rises from 0V to 400V c. Equivalent capacitance to give same charging time as VDS rises from 0V to 400V

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 5 TP65H050G4WS Electrical Parameters (TJ=25°C unless otherwise stated) Symbol Parameter Min Typ Max Unit Test Conditions Reverse Device Characteristics IS Reverse current — — 22 A VGS=0V, TC=100°C, ≤25% duty cycle VSD Reverse voltage a — 2.2 2.6 V VGS=0V, IS=22A — 1.6 1.9 VGS=0V, IS=11A tRR Reverse recovery time — 50 — ns IS=22A, VDD=400V QRR Reverse recovery charge — 120 — nC (di/dt)RM Reverse diode di/dt b — — 2500 A/µs Circuit implementation and parameters on page 3 Notes: a. Includes dynamic RDS(on) effect b. Reverse conduction di/dt will not exceed this max value with recommended RG.

Figure 13. Safe Operating Area TC=25°C

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 11 TP65H050G4WS Design Considerations The fast switching of GaN devices reduces current-voltage crossover losses and enables high frequency operation while simultaneously achieving high efficiency. However, taking full advantage of the fast switching characteristics of GaN switche s requires adherence to specific PCB layout guidelines and probing techniques. Before evaluating Transphorm GaN devices, see application note Printed Circuit Board Layout and Probing for GaN Power Switches. The table below provides some practical rules that should be followed during the evaluation. When Evaluating Transphorm GaN Devices: DO DO NOT Minimize circuit inductance by keeping traces short, both in the drive and power loop Twist the pins of TO-220 or TO-247 to accommodate GDS board layout Minimize lead length of TO-220 and TO-247 package when mounting to the PCB Use long traces in drive circuit, long lead length of the devices Use shortest sense loop for probing; attach the probe and its ground connection directly to the test points Use differential mode probe or probe ground clip with long wire See AN0003: Printed Circuit Board Layout and Probing GaN Design Resources The complete technical library of GaN design tools can be found at transphormusa.com/design:

  • Evaluation kits
  • Application notes
  • Design guides
  • Simulation models
  • Technical papers and presentations

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 12 TP65H050G4WS Mechanical 3 Lead TO-247 Package

July. 22, 2021 transphormusa.com tp65h050g4ws.1v0 13 TP65H050G4WS

Revision History

Version Date Change(s) 0 01/01/2021 Preliminary 0.1 05/06/2021 preliminary datasheet update 1.0 07/22/2021 Datasheet complete