TC3977 TRANSCOM | Alldatasheet
Document overview
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Technical content
PRE2_20050418 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 1
3 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
- 3W Typical Output Power
- 12dB Typical Linear Power Gain at 2.45GHz
- High Linearity: IP3 = 45 dBm Typical
- High Power Added Efficiency: Nominal PAE of 35%
- Breakdown Voltage: BVDGO ≥ 18V
- Wg = 7.5 mm
- 100 % DC Tested
- Suitable for High Reliability Application
DESCRIPTION
The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point V DS = 10 V 34.5 35.5 dBm GL Linear Power Gain V DS = 10 V 12 dB IP3 Intercept Point of the 3 rd-order Intermodulation VDS = 10 V, *PSCL = 24 dBm 45 dBm PAE Power Added Efficiency at 1dB Compression Power 35 % IDS Drain-Source Current at V DS = 10 V 900 mA BVDGO Drain-Gate Breakdown Voltage at I DGO = 3.75mA 18 22 Volts Rth Thermal Resistance 5.3 °C/W Note: *PSCL: Output Power of Single Carrier Level. PHOTO ENLARGEMENT Preliminary