TC1501

TC1501 TRANSCOM | Alldatasheet

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Technical content

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1W High Linearity and High Efficiency GaAs Power FETs

FEATURES

! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 13 dB Typical at 6 GHz ! High Linearity: IP3 = 40 dBm Typical at 6 GHz ! High Power Added Efficiency: Nominal PAE of 43% at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown V oltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 2.4 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested

DESCRIPTION

The TC1501 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 240 mA 29.5 30 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 240 mA 12 13 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 240 mA,*PSCL = 17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 600 mA gm Transconductance at V DS = 2 V, VGS = 0 V 400 mS VP Pinch-off V oltage at V DS = 2 V, ID = 4.8 mA -1.7** V olts BVDGO Drain-Gate Breakdown V oltage at I DGO =1.2 mA 15 18 V olts Rth Thermal Resistance 12 °C/W Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1501’s are divided into 3 groups: (1) TC1501P1519 : Vp = -1.5V to -1.9V (2) TC1501P1620 : Vp = -1.6V to -2.0V (3)TC1501P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source V oltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 28 dBm PT Continuous Dissipation 3.8 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS Units: Micrometers Chip Thickness: 50 Gate Pad: 79 x 59.5 Drain Pad: 86.0 x 76.0 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . G G DD 600±±±± 12 470±±±± 12

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (T A=25 °°°°C) VDS = 8 V , IDS = 240 mA 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

0.04 0.01 Per Div S12 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires.

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Cgs Cgd Cds Rg Rd Rdb Ris Rs Id Lg Ld Ls Cbs Rid SMALL SIGNAL MODEL, VDS = 8 V , IDS = 240 mA SCHEMATI Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Lg 0.039 nH Rs 0.394 Ohm Rg 0.45 Ohm Ls 0.01 nH Cgs 4.435 pF Cds 0.536 pF Ri 0.91 Ohm Rds 63.7 Ohm Cgd 0.181 pF Rd 0.63 Ohm Gm 440.3 mS Ld 0.008 nH T 3.9 psec LARGE SIGNAL MODEL, VDS = 8 V , IDS = 240 mA SCHEMATI TOM2 MODEL PARAMETERS VTO -1.768 V VMAX 0.5 V ALPHA 2.81 CGD 0.1805 pF BETA 0.549 CGS 7.22 pF GAMMA 0.0173 CDS 0.5364 pF DELTA 0.0818 RIS 0.908 Ohm Q 0.96 RID 0.0001 Ohm NG 0.1 VBR 15 V ND 0.01 RDB 46.517 Ohm TAU 3.9 ps CBS 9.6833 pF RG 0.454 Ohm TNOM 25 °C RD 0.63 Ohm LS 0.0101 nH RS 0.394 Ohm LG 0.0391 nH IS 1E-11 mA LD 0.008 nH N 1 AFAC 1 VBI 1 V NFING 1 VDELTA 0.2 V