TC2996A

TC2996A TRANSCOM | Alldatasheet

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Technical content

REV1_20070503 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3

1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

FEATURES

• 12 W Typical Power at 1.6 GHz
• 13 dB Typical Linear Power Gain at 1.6 GHz
• High Linearity:IP3 = 50 dBm Typical
• High Power Added Efficiency:Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 30 mm
• 100 % DC and RF Tested
• Flange Ceramic Package

DESCRIPTION

The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( V DS = 10.5, IDS = 2.5A @ 1.6GHz ) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point 39.5 41 dBm GL Linear Power Gain 12 13 dB IP3 Intercept Point of the 3 rd-order Intermodulation, *PSCL = 28 dBm 50 dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 7.5 A gm Transconductance at V DS = 2 V, VGS = 0 V 5400 mS VP Pinch-off Voltage at V DS = 2 V, ID = 60 mA -1.7 Volts BVDGO Drain-Gate Breakdown Voltage at I DGO =15 mA 20 22 V olts Rth Thermal Resistance 1.5 °C/W * PSCL: Output Power of Single Carrier Level. PHOTO ENLARGEMENT

REV1_20070503 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2 / 3 ABSOLUTE MAXIMUM RATINGS at 25 °°°°C Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 35 dBm PT Continuous Dissipation 60 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . FLANGE PACKAGE OUTLINE (in mm) Gate Drain SourceSource

REV1_20070503 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 3 / 3 Part Type Reference Designator Description Manufacturer Resistor R1 10 ohm, 0805 Capacitor Ci1 3 pF, 0603 Murata Capacitor Ci2 3.9 pF, 0603 Murata Capacitor Ci3 0.75 pF, 0603 Murata Capacitor Ci4 1000 pF, 0603 Murata Capacitor Ci5 0.1 uF, 0603 Murata Capacitor Ci6 10 uF, 1206 Murata Capacitor Co1 3.9 pF, 0603 Murata Capacitor Co2 3.9 pF, 0603 Murata Capacitor Co3 2 pF, 0603 Murata Capacitor Co4 1000 pF, 0603 Murata Capacitor Co5 0.1 uF, 0603 Murata Capacitor Co6 10 uF, 1206 Murata PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil EV ALUATION BOARD RF out RF in 0805 Ci1, 3 pF Ci2, 3.9 pF Co4, 1000 pF Co2, 3.9 pF Ci3, 0.75 pF Ci5, 0.1uF Co1, 3.9 pF Co3, 2 pF 1206 R1, 10 ohm 0805 Ci6, 10 uF Ci4, 1000 pF 1206 Co5, 0.1uF Co6, 10 uF +10.5 V T04-093_1.4ohm @1.6GHz -Vg