TC2591 TRANSCOM | Alldatasheet

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Technical content

REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3

1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

FEATURES

  • 1 W Typical Output Power at 6 GHz
  • 12 dB Typical Linear Power Gain at 6 GHz
  • High Linearity: IP3 = 40 dBm Typical at 6 GHz
  • High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
  • Suitable for High Reliability Application
  • Breakdown Voltage: BVDGO ≥ 15 V
  • Lg = 0.35 µm, Wg = 2.4 mm
  • Tight Vp ranges control
  • High RF input power handling capability
  • 100 % DC Tested
  • Flange Ceramic Package

DESCRIPTION

The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA 29.5 30 dBm GL Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA 11 12 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6GHz VDS = 8 V , IDS = 240 mA, *PSCL = 17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz 43 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 600 mA gm Transconductance at V DS = 2 V, VGS = 0 V 400 mS VP Pinch-off Voltage at V DS = 2 V, ID = 4.8 mA -1.7** Volts BVDGO Drain-Gate Breakdown Voltage at I DGO =1.2 mA 15 18 Volts Rth Thermal Resistance 18 °C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. PHOTO ENLARGEMENT

REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2 / 3 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 28 dBm PT Continuous Dissipation 3.8 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain to Source Voltage 8 V ID Drain Current 240 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) VDS = 8 V , IDS = 240 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG OUTLINE DIMENSIONS (Unit: mm) Drain SourceSource

REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 3 / 3 NONLINEAR MODEL FET Cgd Cgs Cds Crf Cpkg1Cpkg2 Cpkg1 Cpkg2 Ri Rs Rds Rd Rg Ls Lg Lpkg2 Lpkg4 Ld Lpkg1 Lpkg3 Lpkg1Lpkg2Lpkg3G D S TOM2 MODEL PARAMETERS VTO -2 V CGD 0.22 pF ALPHA 4.54 CGS 4.04 pF BETA 0.399 CDS 0.62 pF GAMMA 0.0084 VBR 15 V DELTA 0.003 TNOM 27 °C Q 1.055 LS 0.009 nH NG 0 LG 0.0475 nH ND 0.01 LD 0.032 nH TAU 3.9 ps Rds 10.29 Ohm RG 0.65 Ohm Ri 0.0375 Ohm RD 0.675 Ohm Crf 1E-7 PF RS 0.475 Ohm Lpkg1 0.1 nH IS 1E-14 mA Lpkg2 0.16 nH N 1 Lpkg3 0.07 nH VBI 0.68 V Lpkg4 0.032 nH VDELTA 0.2 V Cpkg1 0.42 PF VMAX 0.5 V Cpkg2 0.26 PF MODEL RANGE Frequency: 0.5 to 10 GHz Bias: VDS = 1V to 8V , ID = 100mA to 600mA IDS = 600mA at VGS = 0V , VDS = 2V