TC2696 TRANSCOM | Alldatasheet
Document overview
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Technical content
REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
- 2 W Typical Output Power at 6 GHz
- 10 dB Typical Linear Power Gain at 6 GHz
- High Linearity: IP3 = 43 dBm Typical at 6 GHz
- High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
- Suitable for High Reliability Application
- Breakdown Voltage: BVDGO ≥ 18 V
- Lg = 0.6 µm, Wg = 5 mm
- Tight Vp ranges control
- High RF input power handling capability
- 100 % DC Tested
- Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (T A=25 °°°°C) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 500 mA 32.5 33 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA 10 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA, *PSCL = 20 dBm 43 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 1.25 A gm Transconductance at V DS = 2 V, VGS = 0 V 850 mS VP Pinch-off Voltage at V DS = 2 V, ID = 10 mA -1.7** V olts BVDGO Drain-Gate Breakdown Voltage at I DGO =2.5 mA 15 18 V olts Rth Thermal Resistance 7 °C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. PHOTO ENLARGEMENT
REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/2 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 30 dBm PT Continuous Dissipation 7.7 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain to Source Voltage 8 V ID Drain Current 500 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) VDS = 8 V , IDS = 500 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG OUTLINE DIMENSIONS (Unit: mm) SourceSource Drain