TC3953 TRANSCOM | Alldatasheet
Document overview
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Technical content
PRE2_20070503 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 2 - Preliminary Datasheet -
1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz
FEATURES
- Prematched for 5~8 GHz
- 1W of Typical Output Power at 5~8 GHz
- 8dB of Typical Linear Power Gain at 8 GHz
- High Linearity: IP3 = 40 dBm Typical at 5~8 GHz
- High Power Added Efficiency: Nominal PAE of 35 % at 5~8 GHz
- Breakdown Voltage: BVDGO ≥ 15V
- Wg = 2.4 mm
- 100 % DC Tested
- Suitable for High Reliability Application
- Lost Cost SMT Ceramic Package
DESCRIPTION
The TC3953 is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost and high volume 1W amplifiers for 5~8GHz. It provides typical gain of 8dB and P1dB of 30dBm at 8GHz. The single positive drain bias is 9V and the typical drain-source current is 300mA. The device is packaged in copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct soldering of the device to the PCB. ELECTRICAL SPECIFICATIONS (T A=25℃℃℃℃) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point, f = 8 GHz VDS = 9V 29 30 dBm GL Linear Power Gain, f = 8 GHz VDS = 9V 7 8 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 8 GHz VDS = 9V, *PSCL = 17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 8GHz 35 % IDS Drain-Source Current at V DS = 9V 300 mA BVDGO Drain-Gate Breakdown Voltage at I DGO = 1.2mA 15 18 V olts Note: *PSCL: Output Power of Single Carrier Level. PHOTO ENLARGEMENT
PRE2_20070503 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2 / 2 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain to Source Voltage 9V Symbol Parameter Rating VDS Drain-Source Voltage 12 V Pin RF Input Power, CW 28 dBm PT Continuous Dissipation 3.8 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . EV ALUATION BOARD PCB Material: RO4003 ER＝＝＝＝3.38 Thickness＝＝＝＝20 mil Unit：：：：mil * DXF file of the PCB can be downloaded from our web-site at www.transcominc.com.tw Evaluation Board Parts List Qt'y Description Reference Designator Manufacturer Inventory ID 1 Chip CAP(0603)0.75PF±5% Murata GRM39COG0R75C50V
1 Chip CAP(0603)1000PF±10% Murata GRM39X7R102K50V
1 Chip CAP(0603)1.2PF±5% Murata GRM39COG1R2C50V