TC3843 TRANSCOM | Alldatasheet
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Technical content
TC3843 REV0_20070808 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science -Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886 -6-5050086 Fax: 886-6-5051602 P1 / 3 870~925 MHz Single -Bias GaAs Low Noise Amplifier FEATURES PHOTO ENLARGEMENT l 50 ohm matched for 870~925 MHz l 24 dBm Typical P1dB l 19 dB Typical Linear Power Gain l 36 dBm Typical IP3 l 1.1 dB Typical noise figure l Nominal PAE of 26% l Breakdown Voltage: BVDGO ≥ 15V l 6.0 Volt single bias l Suitable for High Reliability Application
DESCRIPTION
The TC3843 is a single-bias with 50 ohm matched GaAs FET. It is designed for low cost, high volume, applied for 870~925 MHz low noise amplifiers. It provides noise figure of 1.1 dB, gain of 19 dB and P1dB of 24 dBm, typically. The single positive drain bias is 6 V and the typical drain-source current is 160 mA. The device is packaged in a copper based ceramic 10-pin SMT packages. The copper based carrier of the package allows direct soldering of the device to the PCB. ELECTRICAL SPECIFICATIONS (TA=25℃) Symbol CONDITIONS MIN TYP MAX UNIT FREQ Frequency Range 870 925 MHz P1dB Output Power at 1dB Gain Compression Point, V DS = 6 V 22 24 dBm GL Linear Power Gain, V DS = 6 V 16 19 dB IP3 Intercept Point of the 3 rd-order Intermodulation, V DS = 6 V, *PSCL = 14 dBm 33 36 dBm NF Noise Figure, V DS = 6 V 1.1 1.5 dB PAE Power Added Efficiency at 1dB Compression Power 26 % IDS Drain -Source Current at V DS = 6 V 160 220 mA BVDGO Drain -Gate Breakdown Voltage at I DGO = 0.6 mA 15 18 Volts Note: *PSCL: Output Power of Single Carrier Level.
TC3843 REV0_20070808 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science -Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886 -6-5050086 Fax: 886-6-5051602 P2 / 3 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain -Source Voltage 10 V Pin RF Input Power, CW 26 dBm PT Continuous Dissipation 1.9 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Symbol Parameter Rating VDS Drain to Source Voltage 6 V HANDLING PRECAUTIONS The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. CONNECTION DIAGRAM * Note : Grounding is via package case EVALUATION BOARD PCB Material: FR4 ER＝4.6 Thickness ＝31 mil * Application Notes: For better heat sinking and grounding, it's recommended to have via holes beneath TC3843 filled with solder and have two screws installed on required heat sink plate besides TC3843 on the PCB area.
TC3843 REV0_20070808 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science -Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886 -6-5050086 Fax: 886-6-5051602 P3 / 3 PHYSICAL DIMENSIONS (Unit: inches)