TC3531 TRANSCOM | Alldatasheet

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Technical content

REV4_20060525 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3

5.8 GHz 1W MMIC

FEATURES

  • P-1 dB: 30 dBm
  • Small Signal Gain: 24 dB
  • Power Added Efficiency: 24 %
  • IP3: 39 dBm
  • Match to 50 Ω Operation
  • Bias condition: 600 mA @ 7 V

DESCRIPTION

The TC3531 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume 5.7-5.9 GHz band applications. The MMIC is matched to 50 Ω operation. No external matching component is required. It provides a typical gain of 24 dB and P1 dB power of 30 dBm. Typical bias condition is 7V at 600 mA. The MMIC is a packaged in a co pper based ceramic 10 pins power package. The copper based carrier of the pac kage allows direct soldering of the device to the PCB for proper heat sinking.

APPLICATIONS

  • Wireless Internet Access ELECTRICAL SPECIFICATIONS (Ta = 25 °°°°C) SYMBOL DESCRIPTION MIN TYP MAX UNITS FREQ Frequency Range 5.7 5.9 GHz SSG Small Signal Gain 22 24 dB P-1 dB Output Power at 1 dB Gain Compression 29 30 dBm P-3 dB Output Power at 3 dB Gain Compression 30 31 dBm IP3 Third Order Intercept Point 37 39 dBm VSWR, IN Input VSWR 2:1 - VDD Supply Voltage 7 Volt Vg Gate Voltage -0.6 -1.0 -2 Volt IDD Current Supply Without RF 600 mA IDP-1 Current Supply @ Pout = P-1 dB 620 mA ηηηη a Power Added Efficiency 24 % PHOTO ENLARGEMENT GND Vg1 RF OUT NC GND RF IN Vd1 Vg2 GND Vd2

REV4_20060516 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2 / 2 Absolute Maximum Ratings Symbol Parameter/Conditions Min. Max. Units Vdd Drain-Source Voltage 12 Volts Idd Total Drain Current 1600 mA Pin RF Input Power 11 dBm Pt Power Dissipation 7 W Tch Operating Channel Temperature 175 °C TSTG Storage Temperature -65 175 °C Note: 1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2. Specifications subject to change without notice. TEST CIRCUITS Evaluation Board Schematic EV ALUATION BOARD PCB Material: RO4003 ER = 3.38 Thickness = 20 mil Unit: mil * DXF file of the PCB can be downloaded from our web-site at www.transcominc.com.tw * Application Notes: For better heat sinking and grounding, it's recommended to have the via holes beneath TC3531 filled with solder and have two screws besides TC3531 installed on the PCB area.

REV4_20060525 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 3 / 3 0.0090.007 G D E J 0.054 7°0° 0.0870.0800.073 0.0400.020 0.2730.2700.267 0.2530.2500.247 0.0530.047 0.2730.2700.267 0.0230.0200.017 0.0090.0080.007 0.008 0.050 0.0600.057 α MINIMUMDIMENSION J I H G F E D C B A MAXIMUMNOMINAL 0.002MAX A B I α H F C TC3531 *NC Vg GND LINERF IN Vd RF OUT 3 8ohm50 LINEohm50 GND GND Evaluation Board Parts List Part Type Reference Designator Description Manufacturer Part Number Capacitor C1, C2, C3 1000pF 0603 Murata GRM39C0G102J50V Capacitor C4, C5 0.1 uF 0603 Murata GRM39Y5V104Z25V Capacitor C6, C7 4.7uF Tantalum Cap. Resistor R1 200 ohm 0603 CONNECTION DIAGRAM AND PIN DESCRIPTIONS Pin # Name Description 1, 2, 6 GND Ground

3 RF IN RF input (internally DC blocked)

4, 5 Vd Input stage drain bias 9, 10 Vg FET gate bias

8 RF OUT RF output and V d2 External matching circuit required

7 NC No Connection

PHYSICAL DIMENSIONS (Unit: inch)