TC3331 TRANSCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
REV5_20060516 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3 3.3 - 3.7 GHz 1W MMIC
FEATURES
- P-1 dB: 30 dBm
- Small Signal Gain: 30 dB
- Power Added Efficiency: 25 %
- IP3: 39 dBm
- Match to 50 Ω operation
- Bias condition: 650 mA @ 7 V
DESCRIPTION
The TC3331 is a 2-stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume 3.3-3.7 GHz band applications. The MMIC is matched to 50 Ω operation. It provides a typical gain of 30 dB and P1dB power of 30 dBm. Typical bias condition is 7V at 650 mA. The MMIC is packaged in a copper based ceramic 10 pins power package. The copper based carrier of the package allows direct soldering of the device to the PCB.
APPLICATIONS
- Wireless Internet Access
- Wireless Local Loop
- Two way radio ELECTRICAL SPECIFICATIONS (Ta = 25 °°°°C) SYMBOL DESCRIPTION MIN TYP MAX UNITS FREQ Frequency Range 3.3 3.7 GHz SSG Small Signal Gain 28 30 dB GOF Small Signal Gain Flatness ±0.5 P-1 dB Output Power at 1 dB Gain Compression 29 30 dBm P-3 dB Output Power at 3 dB Gain Compression 30 31 dBm IP3 Third Order Intercept Point 37 39 dBm VSWR, IN Input VSWR 2:1 VDD Supply Voltage 7 Volt Vg Gate Voltage -0.6 -1.0 -1.5 Volt IDD Current Supply Without RF 650 mA IDP-1 Current Supply @ Pout=P-1 dB 670 mA ηa Power Added Efficiency 25 % PHOTO ENLARGEMENT GND Vg2 Vg1 RF OUT GND RF IN Vd2 GND GND Vd1
REV5_20060516 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2 / 3 Evaluation Board Schematic Absolute Maximum Ratings Symbol Parameter/Conditions Min. Max. Units Vdd Drain-Source Voltage 12 Volts Idd Total Drain Current 2200 mA Pin RF Input Power 7 dBm Pt Power Dissipation 9 W Tch Operating Channel Temperature 175 °C TSTG Storage Temperature -65 175 °C Note: 1.This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2.Specifications subject to change without notice TEST CIRCUITS EV ALUATION BOARD PCB Material: RO4003 ER = 3.38 Thickness = 20 mil Unit: mil ! DXF file of the PCB can be downloaded from our web-site at www.transcominc.com.tw ! Application Notes: For better heat sinking and grounding, it's recommended to have the via holes beneath TC3331 filled with solder and have two screws installed on required heat sink plate besides TC3331 on the PCB area.
REV5_20060516 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 3 / 3 0.0090.007G D E J 0.054 7°0° 0.0870.0800.073 0.0400.020 0.2730.2700.267 0.2530.2500.247 0.0530.047 0.2730.2700.267 0.0230.0200.017 0.0090.0080.007 0.008 0.050 0.0600.057 α MINIMUMDIMENSION J I H G F E D C B A MAXIMUMNOMINAL 0.002MAX A B I α H F C TC3331 Evaluation Board Parts List Part Type Reference Designator Description Manufacturer Part Number Capacitor C1, C2, C3, C4 1000pF 0603 Murata GRM39C0G102J50V Capacitor C6, C7 0.1 uF 0603 Murata GRM39Y5V104Z25V Capacitor C5 4.7uF Tantalum Cap. Capacitor C8 2.5pF 0603 Murata GRM39C0G2R5C50V Capacitor C9 1.8pF 0603 Murata GRM39C0G1R8C50V Resistor R1 200 ohm 0603 CONNECTION DIAGRAM AND PIN DESCRIPTIONS PHYSICAL DIMENSIONS (Unit: inch) Vg GND LINERF IN Vd RF OUT 3ohm50 LINEohm50 GND GND GND Pin # Name Description 1, 2, 6, 7 GND Ground
3 RF IN RF input (internally DC blocked)
4, 5 V d MMIC drain bias 9, 10 Vg MMIC gate bias