TC2876 TRANSCOM | Alldatasheet
Document overview
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Technical content
REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1/2
5 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
- 5 W Typical Output Power at 6 GHz
- 7 dB Typical Linear Power Gain at 6 GHz
- High Linearity: IP3 = 47 dBm Typical at 6 GHz
- High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
- Suitable for High Reliability Application
- Breakdown Voltage: BVDGO ≥ 18 V
- Lg = 0.6 µm, Wg = 12 mm
- Tight Vp ranges control
- High RF input power handling capability
- 100 % DC Tested
- Low Cost Ceramic Package
DESCRIPTION
The TC2876 is packaged with the TC1806 Pse udomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 1200 mA 36 36.5 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA 7 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm 47 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 40 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 3 A gm Transconductance at V DS = 2 V, VGS = 0 V 2000 mS VP Pinch-off Voltage at V DS = 2 V, ID = 24 mA -1.7** V olts BVDGO Drain-Gate Breakdown Voltage at I DGO =6 mA 18 22 V olts Rth Thermal Resistance 3.5 °C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. PHOTO ENLARGEMENT
REV4_20070507 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2/2 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 33 dBm PT Continuous Dissipation 12 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain to Source Voltage 8 V ID Drain Current 1200 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . OUTLINE DIMENSIONS (Unit: inch)