TC1801

TC1801 TRANSCOM | Alldatasheet

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Technical content

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5W High Linearity and High Efficiency GaAs Power FETs

FEATURES

! 5 W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 10 dB Typical at 6 GHz ! High Linearity: IP3 = 47 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown V oltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 12 mm ! High Power Added Efficiency: PAE ≥ 40 % for Class A Operation ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested

DESCRIPTION

The TC1801 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20 GHz. All devices are 100 % DC tested to assure consistent quality.Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA 36 36.5 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA 9 10 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6GHz VDS = 8V, IDS =1200mA,*PSCL=23 dBm 47 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 40 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 3 A gm Transconductance at V DS = 2 V, VGS = 0 V 2000 mS VP Pinch-off V oltage at V DS = 2 V, ID = 24 mA -1.7** Vo l t s BVDGO Drain-Gate Breakdown V oltage at I DGO = 6 mA 15 18 Vo l t s Rth Thermal Resistance 2 °C/W Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1801’s are divided into 3 groups: (1) TC1801P1519 : Vp = -1.5V to -1.9V (2) TC1801P1620 : Vp = -1.6V to -2.0V (3)TC1801P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source V oltage -5 V ID Drain Current 3 A Pin Input Power, CW 33 dBm PT Continuous Dissipation 12 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Symbol Parameter Rating VDS Drain to Source V oltage 8 V ID Drain Current 1200 mA CHIP DIMENSIONS D D D G G GG GG G D DD D G D 1961 ±±±± 12 500 ±±±± 12 Units: Micrometers Chip Thickness: 50 Gate Pad: 76.0 x 59.5 Drain Pad: 86.0 x 76.0 TYPICAL SCATTERING PARAMETERS (VDS = 8 V , IDS = 1200 mA) FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S11 S21 S12 S22

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG SMALL SIGNAL MODEL, VDS = 8 V , IDS = 1200 mA SCHEMATI FET Parameter Lg = 0.002 nH Rs = 0.096 Ohm Rg = 0.125 Ohm Ls = 0.001 nH Cgs = 18.81 pF Cds = 2.1 pF Ri = 0.203 Ohm Rds = 21.25 Ohm Cgd = 1.05 pF Rd = 0.167 Ohm Gm = 2016 mS Ld = 0.002 nH T = 3.9 psec Rg Rd Rs Ri Rds Ls LdLg Cgs Cgd Cds Gm T