TC1706 TRANSCOM | Alldatasheet
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REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602
3 W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 3W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 11 dB Typical at 6 GHz ! High Linearity: IP3 = 45 dBm Typical at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown V oltage: BVDGO ≥ 18 V ! Lg = 0.6 µm*, Wg = 7.5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested
DESCRIPTION
The TC1706 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 750 mA 34.5 35.5 dBm GL Linear Power Gain , f = 6 GHz VDS = 8 V, IDS = 750 mA 10 11 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz VDS = 8V, IDS = 750mA,PSCL = 21 dBm 45 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 1.8 A gm Transconductance at V DS = 2 V, VGS = 0 V 1275 mS VP Pinch-off V oltage at V DS = 2 V, ID = 15 mA -1.7* Vo l t s BVDGO Drain-Gate Breakdown V oltage at I DGO = 3.75 mA 18 22 Vo l t s Rth Thermal Resistance 4 °C/W Note: * FET with 0.35 µµµµm gate length is available for high frequency operation. Please contact factory for detail. PSCL: Output Power of Single Carrier Level. * For the tight control of the pinch-off voltage . TC1706’s are divided into 3 groups: (1) TC1706P1519 : Vp = -1.5V to -1.9V (2) TC1706P1620 : Vp = -1.6V to -2.0V (3)TC1706P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source V oltage -5 V IDS Drain Current I DSS Pin RF Input Power, CW 31.5 dBm PT Continuous Dissipation 11.5 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS Units: Micrometers Chip Thickness: 50 Gate Pad: 76.0 x 59.5 Drain Pad: 86.0 x 76.0 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . G DD G D G D G D G D G 1510!12 470!12
REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (T A=25 °°°°C) VDS = 8 V , IDS = 750 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S11 S21 S12 S22 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max
18 GHz
2 GHz
0.02 0.005 Per Div S12 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22
REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, VDS = 8 V , IDS = 750 mA SCHEMATI Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Lg 0.014 nH Rs 0.177 Ohm Rg 0.155 Ohm Ls 0.002 nH Cgs 13.74 pF Cds 1.786 pF Ri 0.308 Ohm Rds 19.83 Ohm Cgd 0.482 pF Rd 0.233 Ohm Gm 1401 mS Ld 0.002 nH T 3.9 psec