TC1601 TRANSCOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

REV4_20060510 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2W High Linearity and High Efficiency GaAs Power FETs

FEATURES

! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown V oltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested

DESCRIPTION

The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20 GHz. All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 500 mA 32.5 33 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA 11 12 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS =500 mA,*PSCL = 20 dBm 43 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 1.2 A gm Transconductance at V DS = 2 V, VGS = 0 V 850 mS VP Pinch-off V oltage at V DS = 2 V, ID = 10 mA -1.7** V olts BVDGO Drain-Gate Breakdown V oltage at I DGO = 2.5 mA 15 18 V olts Rth Thermal Resistance 6 °C/W Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1601’s are divided into 3 groups: (1) TC1601P1519 : Vp = -1.5V to -1.9V (2) TC1601P1620 : Vp = -1.6V to -2.0V (3)TC1601P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.

REV4_20060510 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) RECOMMANDED OPERATING CONDITION Symbol Parameter Rating VDS Drain-Source V oltage 12 V VGS Gate-Source V oltage -5 V ID Drain Current 1.2 A PT Continuous Dissipation 7.7 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Symbol Parameter Rating V DS Drain to Source V oltage 8 V ID Drain Current 500 mA CHIP DIMENSIONS U n i t s : M i c r o m e t e r s G a t e P a d : 7 6 . 0 x 5 9 . 5 C h i p T h i c k n e s s : 5 0 D r a i n P a d : 8 6 . 0 x 7 6 . 0 G G D D G G D D 1060±±±± 12 470±±±± 12

REV4_20060510 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETER (VDS = 8 V , IDS = 500 mA) FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires.

REV4_20060510 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SMALL SIGNAL MODEL, VDS = 8 V , IDS = 500 mA SCHEMATI FET Parameter Lg = 0.0035 nH Rs = 0.23 Ohm Rg = 0.3 Ohm Ls = 0.0013 nH Cgs = 7.84 pF Cds = 0.864 pF Ri = 0.487 Ohm Rds = 51 Ohm Cgd = 0.44 pF Rd = 0.402 Ohm Gm = 840 mS Ld = 0.006 nH T = 3.9 psec Rg Rd Rs Ri Rds Ls LdLg Cgs Cgd Cds Gm T