TC1301V TRANSCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Low Noise and Medium Power GaAs FETs
FEATURES
! Via hole for source grouding PHOTO ENLARGEMENT ! Low Noise Figure: NF = 0.8dB Typical at 12 GHz ! High Associated Gain: Ga = 12 dB Typical at 12 GHz ! High Dynamic Range: 1 dB Compression Power P-1 = 24.5 dBm at 12 GHz ! Breakdown V oltage: BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 600 µm ! All-Gold Metallization for High Reliability ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested
DESCRIPTION
The TC1301V is the same as TC1301 expect via holes in the source pads for reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 4 V, IDS = 50 Ma, f = 12GHz 0.8 1.0 dB Ga Associated Gain at V DS = 4 V, IDS = 50 mA, f = 12GHz 10 12 dB P1dB Output Power at 1dB Gain Compression Point, f = 12GHz,VDS = 6 V, IDS = 80 mA 23.5 24.5 dBm GL Linear Power Gain, f = 12GHz,VDS = 6 V, IDS = 80 mA 9 10 dB IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 180 mA gm Transconductance at V DS = 2 V, VGS = 0 V 200 mS VP Pinch-off V oltage at V DS = 2 V, ID = 1.2 mA -1.0* V olts BVDGO Drain-Gate Breakdown V oltage at I DGO =0.3mA 9 12 V olts Rth Thermal Resistance 48 °C/W Note: * For the tight control of the pinch-off voltage . TC1301V’s are divided into 3 groups: (1) TC1301VP0710 : Vp = -0.7V to -1.0V (2) TC1301VP0811 : V p = - 0 . 8 V t o - 1 . 1 V (3) TC1301VP0912 : V p = - 0 . 9 V t o - 1 . 2 V In addition, the customers may specify their requirements.
REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source V olta ge 7.0 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 600 µA Pin RF Input Power, CW 24 dBm PT Continuous Dissipation 800 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS Units: Micrometers Chip Thickness: 50 Gate Pad: 75 x 70 Drain Pad: 80 x 70 Source Pad: 75 x 80 CHIP HANDLING DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290 ℃± 5℃ ; Handling Tool : Tweezers ; Time : less than 1min . WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. State Temperature : 220 ℃ to 250 ℃ ; Bond Tip Temperature : 150 ℃ ; Bond Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must less than 300V . SG S G S G S DD D 430 ! 12 290 ! 12