TC1301

TC1301 TRANSCOM | Alldatasheet

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Technical content

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Low Noise and Medium Power GaAs FETs

FEATURES

! Low Noise Figure: NF = 0.8 dB Typical at 12 GHz PHOTO ENLARGEMENT ! High Associated Gain: Ga = 10 dB Typical at 12 GHz ! High Dynamic Range: 1 dB Compression Power P-1 = 24.5 dBm at 12 GHz ! Breakdown V oltage: BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 600 µm ! All-Gold Metallization for High Reliability ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested

DESCRIPTION

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 4 V, IDS = 50 mA, f = 12GHz 0.8 1.0 dB Ga Associated Gain at V DS = 4 V, IDS = 50 mA, f = 12GHz 9 10 dB P1dB Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 6 V, IDS = 80 mA 23.5 24.5 dBm GL Linear Power Gain, f = 12GHz ,VDS = 6 V, IDS = 80 mA 9 10 dB IDSS Saturated Drain-Source Current at V DS = 2 V, VGS = 0 V 180 mA gm Transconductance at V DS = 2 V, VGS = 0 V 200 mS VP Pinch-off V oltage at V DS = 2 V, ID = 1.2 mA -1.0* V olts BVDGO Drain-Gate Breakdown V oltage at I DGO =0.3 mA 9 12 V olts Rth Thermal Resistance 60 °C/W Note: * For the tight control of the pinch-off voltage . TC1301’s are divided into 3 groups: In addition, the customers may specify their requirements.

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SG S G S G S DD D 760±±±± 12 290±±±± 12 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) TYPICAL NOISE PARAMETERS (T A=25 °°°°C) VDS = 4 V , IDS = 50 mA Symbol Parameter Rating V DS Drain-Source V oltage 7.0 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 600 µA Pin RF Input Power, CW 24 dBm PT Continuous Dissipation 800 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Γopt Frequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.36 19.7 0.88 15 0.28 4 0.48 16.6 0.74 39 0.18 6 0.59 14.3 0.62 64 0.15 8 0.70 12.7 0.55 92 0.12 10 0.78 11.7 0.50 120 0.09 12 0.85 10.9 0.49 148 0.06 14 0.98 10.4 0.50 174 0.04 16 1.12 9.8 0.51 -162 0.04 18 1.27 9.0 0.54 -141 0.07 CHIP DIMENSIONS Chip Thickness: 100 Drain Pad: 80 x 70 Source Pad: 75 x 80

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (T A=25 °°°°C) VDS = 4 V , IDS = 50 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires. 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

0.1 0.01 Per Div S12 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (T A=25 °°°°C) VDS = 6 V , IDS = 80 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG *The data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, VDS = 4 V , IDS = 50 mA 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 0.09 0.03 Per Div S12 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SCHEMATI Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Lg 0.057 nH Rs 1.66 Ohm Rg 2.08 Ohm Ls 0.019 nH Cgs 0.959 pF Cds 0.167 pF Ri 5.78 Ohm Rds 93.2 Ohm Cgd 0.074 pF Rd 1.358 Ohm Gm 284.0 mS Ld 0.038 nH T 5.54 psec SMALL SIGNAL MODEL, VDS = 6 V , IDS = 80 mA SCHEMATI Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Lg 0.056 nH Rs 1.808 Ohm Rg 1.954 Ohm Ls 0.016 nH Cgs 1.33 pF Cds 0.185 pF Ri 5.58 Ohm Rds 90.1 Ohm Cgd 0.052 pF Rd 1.422 Ohm Gm 315 mS Ld 0.036 nH T 5.63 psec LARGE SIGNAL MODEL, VDS = 6 V , IDS = 80 mA

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SCHEMATIC TOM2 MODEL PARAMETERS Parameters Parameters VTO -0.43283 V VMAX 0.5 V ALPHA 9.54 CGD 0.0554 pF BETA 0.49 CGS 6.018 pF GAMMA 0.0416 CDS 0.1599 pF DELTA 0.3091 RIS 5.755 Ohm Q 0.84 RID 0.001 Ohm NG 0.1 VBR 9 V ND 0.01 RDB 94.333 Ohm TAU 5.558 ps CBS 0.0463 pF RG 2.0833 Ohm TNOM 25 °C RD 1.358 Ohm LS 0.01893 nH RS 1.662 Ohm LG 0.0576 nH IS 1E-11 mA LD 0.038 nH N 1 AFAC 1 VBI 1 V NFING 1 VDELTA 0.2 V CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . Cgs Cgd Cds Rg Rd Rdb Ris Rs Id Lg Ld Ls Cbs Rid