TC1102

TC1102 TRANSCOM | Alldatasheet

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Technical content

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Super Low Noise GaAs FETs

FEATURES

/circle6 Low Noise Figure: NF = 0.5 dB Typical at 12 GHz PHOTO ENLARGEMENT /circle6 High Associated Gain: Ga = 13 dB Typical at 12 GHz /circle6 Lg = 0.25 µ m, Wg = 160 µ m /circle6 All-Gold Metallization for High Reliability /circle6 Tight Vp ranges control /circle6 High RF input power handling capability /circle6 100 % DC Tested

DESCRIPTION

The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise application including a wide range of commerci al and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (T A=25 °° °°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 2 V , I DS = 10 mA ,, f = 12GHz 0.5 0.7 dB Ga Associated Gain at V DS = 2 V , I DS = 10 mA, f = 12GHz 11 13 dB IDSS Saturated Drain-Source Current at V DS = 2 V , V GS = 0 V 48 mA gm Transconductance at V DS = 2 V , V GS = 0 V 55 mS VP Pinch-off V oltage at V DS = 2 V , I D = 0.32 mA -1.0* V olts BV DGO Drain-Gate Breakdown V oltage at I DGO =0.08 mA 5 8 V olts Rth Thermal Resistance 225 °C/W Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups: In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (T A=25 °° °°C) TYPICAL NOISE PARAMETERS (T A=25 °° °°C) VDS = 2 V , I DS = 10 mA Symbol Parameter Rating VDS Drain-Source V oltage 5 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 160 µ A Pin RF Input Power, CW 17 dBm PT Continuous Dissipation 250 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Γopt Frequency (GHz) NF opt (dB) GA (dB) MAG ANG Rn/50 2 0.30 19.0 0.98 15 0.40 4 0.32 17.4 0.84 30 0.35 6 0.34 15.7 0.68 50 0.26 8 0.37 14.3 0.51 76 0.19 10 0.42 12.9 0.38 107 0.12 12 0.47 11.9 0.28 146 0.08 14 0.56 11.4 0.25 193 0.07 16 0.70 11.2 0.32 250 0.11 18 0.87 10.9 0.49 317 0.23

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 CHIP DIMENSIONS Units: Micrometers Gate Pad: 55 x 60 Chip Thickness: 100 Drain Pad: 55 x 60 Source Pad: 55 x 14 250 ± 12 280 ± 12 S S D G

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (T A=25 °° °°C) VDS = 2 V , I DS = 10 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires. 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

0.15 0.075 Per Div S12 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -60 -45 -30 -15 Swp Max 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SMALL SIGNAL MODEL , VDS = 2 V , I DS = 10 mA SCHEMATIC Cgs Cgd Cds Rg Rd Rds Ri Rs Gm T Lg Ld Ls PARAMETERS Lg 0.038 nH Rs 1.7200 Ohm Rg 0.970 Ohm Ls 0.0010 nH Cgs 0.222 pF Cds 0.0610 pF Ri 1.780 Ohm Rds 328.00 Ohm Cgd 0.027 pF Rd 1.6980 Ohm Gm 53.30 mS Ld 0.0229 nH T 1.490 psec CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 °C ± 5 °C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220 °C to 250 °C; Bond Tip Temperature: 150 °C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V .