TC1101V TRANSCOM | Alldatasheet

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Technical content

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Low Noise and Medium Power GaAs FETs

FEATURES

/circle6 Via holes for source grounding PHOTO ENLARGEMENT /circle6 Low Noise Figure: NF = 0.5 dB Typical at 12 GHz /circle6 High Associated Gain: Ga = 13 dB Typical at 12 GHz /circle6 High Dynamic Range: 1 dB Compression Power P -1 = 18.5 dBm at 12 GHz /circle6 Breakdown V oltage: BV DGO ≥ 9 V /circle6 Lg = 0.25 µ m, Wg = 160 µ m /circle6 All-Gold Metallization for High Reliability /circle6 Tight Vp ranges control /circle6 High RF input power handling capability /circle6 100 % DC Tested

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (T A=25 °° °°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 2 V , I DS = 10 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at V DS = 2 V , I DS = 10 mA, f = 12GHz 11 13 dB P1dB Output Power at 1dB Gain Compression Point, f = 12GHz, V DS = 6 V , I DS = 25 mA 17.5 18.5 dBm GL Linear Power Gain, f = 12GHz, VDS = 6 V , I DS = 25 mA 14 15 dB IDSS Saturated Drain-Source Current at V DS = 2 V , V GS = 0 V 48 mA gm Transconductance at V DS = 2 V , V GS = 0 V 55 mS VP Pinch-off V oltage at V DS = 2 V , I D = 0.32 mA -1.0* V olts BV DGO Drain-Gate Breakdown V oltage at I DGO =0.08 mA 9 12 V olts Rth Thermal Resistance 180 °C/W Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups: (1) TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V (3) TC1101VP0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (T A=25 °° °°C) TYPICAL NOISE PARAMETERS (T A=25 °° °°C) VDS = 2 V , I DS = 10 mA Symbol Parameter Rating VDS Drain-Source V oltage 7.0 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 160 µ A Pin RF Input Power, CW 18 dBm PT Continuous Dissipation 250 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Γopt Frequency (GHz) NF opt (dB) GA (dB) MAG ANG Rn/50 2 0.34 21.2 0.97 14 0.63 4 0.36 19.3 0.83 30 0.54 6 0.38 17.5 0.68 50 0.42 8 0.42 15.9 0.51 75 0.30 10 0.48 14.4 0.38 106 0.18 12 0.54 13.2 0.28 145 0.14 14 0.63 12.7 0.25 -168 0.12 16 0.76 12.5 0.31 -111 0.17 18 0.94 12.2 0.49 -45 0.36

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 CHIP DIMENSIONS Units: Micrometers Chip Thickness: 55 Gate Pad: 55 x 50 Drain Pad: 55 x 50 Source Pad: 55 x 60 CHIP HANDLING DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290 °C ±5°C ; Handling Tool : Tweezers ; Time : less than 1min . WIRE BONDING : The recommended wire bond method is thermocompression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. State Temperature : 220 °C to 250 °C ; Bond Tip Temperature : 150 °C ; Bond Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must less than 300V . G D SS 290 6 12 250 6 12