TC1101

TC1101 TRANSCOM | Alldatasheet

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Technical content

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 Low Noise and Medium Power GaAs FETs

FEATURES

/circle6 Low Noise Figure: NF = 0.5 dB Typical at 12 GHz PHOTO ENLARGEMENT /circle6 High Associated Gain: Ga = 12 dB Typical at 12 GHz /circle6 High Dynamic Range: 1 dB Compression Power P -1 = 18.5 dBm at 12 GHz /circle6 Breakdown V oltage: BV DGO ≥ 9 V /circle6 Lg = 0.25 µ m, Wg = 160 µ m /circle6 All-Gold Metallization for High Reliability /circle6 Tight Vp ranges control /circle6 High RF input power handling capability /circle6 100 % DC Tested

DESCRIPTION

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (T A=25 °° °°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 2 V , I DS = 10 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at V DS = 2 V , I DS = 10 mA, f = 12GHz 10 12 dB P1dB Output Power at 1dB Gain Compression point, f = 12GHz V DS = 6 V , I DS = 25 mA 17.5 18.5 dBm GL Linear Power Gain, f = 12GHz V DS = 6 V , I DS = 25 mA 14 15 dB IDSS Saturated Drain-Source Current at V DS = 2 V , V GS = 0 V 48 mA gm Transconductance at V DS = 2 V , V GS = 0 V 55 mS VP Pinch-off V oltage at V DS = 2 V , I D = 0.32 mA -1.0* V olts BV DGO Drain-Gate Breakdown V oltage at I DGO =0.08 mA 9 12 V olts Rth Thermal Resistance 225 °C/W Note: * For the tight control of the pinch-off voltage . TC1101’s are divided into 3 groups: In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (T A=25 °° °°C) TYPICAL NOISE PARAMETERS (T A=25 °° °°C) VDS = 2 V , I DS = 10 mA Symbol Parameter Rating VDS Drain-Source V oltage 7.0 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 160 µ A Pin RF Input Power, CW 18 dBm PT Continuous Dissipation 250 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Γopt Frequency (GHz) NF opt (dB) GA (dB) MAG ANG Rn/50 2 0.38 19.8 0.99 4 0.48 4 0.40 17.5 0.90 9 0.40 6 0.42 15.6 0.82 18 0.37 8 0.45 13.9 0.76 29 0.34 10 0.50 13.1 0.69 43 0.32 12 0.55 12.4 0.63 55 0.30 14 0.64 11.7 0.56 65 0.28 16 0.78 11.1 0.45 76 0.26 18 0.95 10.6 0.34 90 0.24

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 G D SS 290± 12 250± 12 CHIP DIMENSIONS Units: Micrometers Gate Pad: 55 x 50 Chip Thickness: 100 Drain Pad: 55 x 50 Source Pad: 55 x 60 TYPICAL SCATTERING PARAMETERS (T A=25 °° °°C) VDS = 2 V , I DS = 10 mA 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

0.15 0.075 Per Div S12

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires. TYPICAL SCATTERING PARAMETERS (T A=25 °° °°C) VDS = 6 V , I DS = 25 mA 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -60 -45 -30 -15 Swp Max 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -75 -60 -45 -30 -15 Swp Max 0.1 0.01 Per Div S12

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG *The data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, V DS = 2 V , I DS = 10 mA 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 - -75 -60 -45 -30 -15 Swp Max 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

REV6_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SCHEMATI Cgs Cgd Cds Rg Rd Rds Ri Rs Gm T Lg Ld Ls PARAMETERS Lg 0.047 nH Rs 1.290 Ohm Rg 1.460 Ohm Ls 0.001 nH Cgs 0.207 pF Cds 0.068 pF Ri 3.680 Ohm Rds 321.5 Ohm Cgd 0.027 pF Rd 1.525 Ohm Gm 54.80 mS Ld 0.038 nH T 3.340 psec SMALL SIGNAL MODEL, V DS = 6 V , I DS = 25 mA SCHEMATI Cgs Cgd Cds Rg Rd Rds Ri Rs Gm T Lg Ld Ls PARAMETERS Lg 0.047 nH Rs 1.250 Ohm Rg 1.460 Ohm Ls 0.001 nH Cgs 0.254 pF Cds 0.067 pF Ri 5.910 Ohm Rds 377.8 Ohm Cgd 0.019 pF Rd 1.525 Ohm Gm 66.00 mS Ld 0.038 nH T 3.640 psec CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 °C ± 5 °C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220 °C to 250 °C; Bond Tip Temperature: 150 °C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electr ostatic Discharge (ESD) precautions should be obser ved at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V .