STP9435M

STP9435M SEMTRON | Alldatasheet

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STP9435M Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TA=25°C -6.5 A TA=70°C -5.2 A IDM Pulsed Drain Current B -26 A IAS Avalanche Current B -20 A EAS Single Pulse Avalanche energy L=0.3mH B 60 mJ PD Power Dissipation A TA=25°C 3.1 W TA=70°C 2 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 40 °C/W Thermal Resistance Junction to Ambient AC Steady-State 80 RθJC Thermal Resistance Junction to Case 30 ■DESCRIPTION STP9435M is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior fast switching performance.These devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 9435 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=-30V, ID=-6.5A RDS(ON)=40mΩ(Typ.)@VGS=-10V RDS(ON)=54mΩ(Typ.)@VGS=-4.5V ◆Fast switch ◆Low gate charge ◆High power and current handling capability ■APPLICATIONS ◆Load Switch ◆Portable Equipment ◆DC-DC Power Management SOP-8 S D D S G S D D S D G

STP9435M Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.5 -2 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V, TJ=25°C -1 μA VDS=-24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-6.5A VGS=-4.5V, ID=-4A 40 65 mΩ Gfs Forward Transconductance VDS=-10V, ID=-4.5A 12 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A, VGS=0V -1 V IS Diode Continuous Forward Current -6.4 A trr Revese Recovery Time IS=-4.5A, dl/dt=100A/μs TJ=25°C 15 ns Qrr Revese Recovery Charg 9.8 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-15V, VGS=-10V ID=-4.5A 9.8 13.8 nC Qg Total Gate Charge (4.5V) 4.8 6.7 Qgs Gate-Source Charge 1.7 2.4 Qgd Gate-Drain Charge 2 2.8 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz 580 pF Coss Output Capacitance 68 Crss Reverse Transfer Capacitance 58 td(on) Turn-On Time D VDD=-15V, VGEN=-10V RG=6Ω, ID=-1A 8.3 nS tr 10 td(off) Turn-Off Time D 16.8 tf 7.8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

STP9435M Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-4V VGS=-2.5V VGS=-3V VGS=-3.5V VGS=-5,-6,-8,-10V -4.5V 0 2 4 6 8 10 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-10V TA=25°C 0 2 4 6 8 10 -VGS(V) Qg-Gate Charge(nC) Gate Charge 200 400 600 800 1000 0 5 10 15 20 25 30 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.6 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.5 1.5 2.5 3.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=-15V ID=-4.5A

STP9435M Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On-Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 1000 -ID (A) Maximum Safe Operation Area - VDS Voltage (V) 1ms 10µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Switching Time Waveform Ton Toff Td(off) Tf TA=25° C 100ms 100µs DC 10ms Duty Cycle, D=t1/t2

STP9435M Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.130 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC. 0.050BSC. L 0.400 1.270 0.016 0.005 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern