SMC2849ES

SMC2849ES SEMTRON | Alldatasheet

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SMC2849ES Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Continuous Drain Current TA=25°C -5.3 A TA=70°C -4.2 A IDM Pulsed Drain Current A -21.2 A PD Power Dissipation B TA=25°C 1.6 W TA=70°C 1 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t≦10s 80 °C/W Thermal Resistance Junction to Ambient BC Steady-State 120 ■DESCRIPTION SMC2849ES is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in -line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 2849 E S - TR G a b c d e f a : Company name. b : Product Serial number. c : ESD d : Package code S: SOT-23L e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS = -20V, ID = -5.3A RDS(ON)=31mΩ(Typ.)@VGS=-4.5V RDS(ON)=40mΩ(Typ.)@VGS=-2.5V RDS(ON)=50mΩ(Typ.)@VGS=-1.8V RDS(ON)=60mΩ(Typ.)@VGS=-1.5V ◆ESD protected ◆1.5V Low gate drive applications ■APPLICATIONS ◆Portable Equipment ◆Power Management SOT-23L S G D G D S

SMC2849ES Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.3 -0.5 -1 V IGSS Gate Leakage Current VDS=0V, VGS=±8V ±10 μA IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V, TJ=25°C -1 μA VDS=-16V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance VGS=-4.5V, ID=-5.3A VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1.2A mΩ Gfs Forward Transconductance VDS=-10V, ID=-4.5A 16 S Diode Characteristics VSD Diode Forward Voltage IS=-1A, VGS=0V -0.7 -1 V IS Diode Continuous Current -2.7 A Dynamic and Switching Parameters Qg Total Gate Charge VDS=-10V,VGS=-4.5V, ID=-4.5A 9.3 13 nC Qgs Gate-Source Charge 1.5 2.1 Qgd Gate-Drain Charge 2.5 3.5 Ciss Input Capacitance VDS=-10V, VGS=0V, f=1MHz 825 pF Coss Output Capacitance 120 Crss Reverse Transfer Capacitance 82 td(on) Turn-On Time VDD=-10V, VGEN=-4.5V RG=3.3Ω, ID=-1A 10.2 19 nS tr 18 34 td(off) Turn-Off Time 46 87 tf 14 27 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. B. The value of RθJA is measured with the device mounted on 1in2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). C. TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC2849ES Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-2.0V VGS=-1.5V VGS=-1.8V 100 0 2 5 6 8 10 RDS(ON) (mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-1.5V VGS=-2.5V VGS=-1.8V TA=25°C 0.9 1.8 2.7 3.6 4.5 0 2 4 6 8 10 -VGS(V) Qg-Gate Charge(nC) Gate Charge 300 600 900 1200 1500 0 5 10 15 20 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 1.8 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=-10V ID=-4.5A

SMC2849ES Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs TJ 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 -ID (A) Maximum Safe Operation Area -VDS Voltage (V) 10µs 1ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 100ms 100µs DC 10ms Duty Cycle, D=t1/t2

SMC2849ES Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23L PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP. e1 1.900 TYP. 0.075 TYP. L1 0.250 0.550 0.010 0.022 θ 0° 8° 0° 8° 0.8mm Recommended Minimum Pad(mm) 0.8mm 1.9mm 2.4mm